Heterogeneous integration of electrically driven microdisk based laser sources for optical interconnects and photonic ICs
Optics Express, Vol. 14, Issue 9, pp. 3864-3871 (2006)
http://dx.doi.org/10.1364/OE.14.003864
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Abstract
A new approach for an electrically driven microlaser based on a microdisk transferred onto Silicon is proposed. The structure is based on a quaternary InGaAsP p-i-n junction including three InAsP quantum wells, on a thin membrane transferred onto silicon by molecular bonding. A p++/n++ tunnel junction is used as the p-type contact. The technological procedure is described and first experimental results show a laser emission in pulsed regime at room temperature, with a threshold current near 1.5 mA.
© 2006 Optical Society of America
OCIS Codes
(130.5990) Integrated optics : Semiconductors
(140.2020) Lasers and laser optics : Diode lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
ToC Category:
Integrated Optics
History
Original Manuscript: February 17, 2006
Revised Manuscript: April 21, 2006
Manuscript Accepted: April 24, 2006
Published: May 1, 2006
Citation
P. Rojo Romeo, J. Van Campenhout, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, D. Van Thourhout, R. Baets, J. M. Fedeli, and L. Di Cioccio, "Heterogeneous integration of electrically driven microdisk based laser sources for optical interconnects and photonic ICs," Opt. Express 14, 3864-3871 (2006)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-14-9-3864
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