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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 10 — May. 14, 2007
  • pp: 6096–6101

Photoluminescence dependence of InGaN/GaN QW on embedded AlGaN δ-layer

Jongwoon Park, Jongho Lee, and Seounghwan Park  »View Author Affiliations

Optics Express, Vol. 15, Issue 10, pp. 6096-6101 (2007)

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An investigation of the effects of an embedded AlGaN δ-layer on the photoluminescence (PL) efficiency of an InGaN/GaN single quantum well (SQW) is presented. In particular, we focus on the dependence of the overlap integral between the electron and hole envelope wavefunctions on the AlGaN δ-layer thickness, aluminum composition, and Mg δ-doping concentration. We have demonstrated by means of simulation and experiment that the overlap integral and PL efficiency are enhanced with increasing δ-layer thickness. They have been shown to be raised further by increasing aluminum composition and Mg δ-doping concentration in the δ-layer.

© 2007 Optical Society of America

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence

ToC Category:

Original Manuscript: March 16, 2007
Revised Manuscript: April 16, 2007
Manuscript Accepted: April 25, 2007
Published: May 2, 2007

Jongwoon Park, Jongho Lee, and Seounghwan Park, "Photoluminescence dependence of InGaN/GaN QW on embedded AlGaN δ-layer," Opt. Express 15, 6096-6101 (2007)

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