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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 11 — May. 28, 2007
  • pp: 6727–6733

Point defect engineered Si sub-bandgap light-emitting diode

Jiming Bao, Malek Tabbal, Taegon Kim, Supakit Charnvanichborikarn, James S. Williams, Michael. J. Aziz, and Federico Capasso  »View Author Affiliations

Optics Express, Vol. 15, Issue 11, pp. 6727-6733 (2007)

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We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line at 1218 nm originates.

© 2007 Optical Society of America

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

Original Manuscript: March 26, 2007
Revised Manuscript: May 8, 2007
Manuscript Accepted: May 11, 2007
Published: May 16, 2007

Jiming Bao, Malek Tabbal, Taegon Kim, Supakit Charnvanichborikarn, James S. Williams, Michael. J. Aziz, and Federico Capasso, "Point defect engineered Si sub-bandgap light-emitting diode," Opt. Express 15, 6727-6733 (2007)

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Fig. 1. Fig. 2. Fig. 3.

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