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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 14 — Jul. 9, 2007
  • pp: 8566–8575

Large-area, three-state, binary amplitude and binary phase vertical-cavity multiple quantum well electroabsorption modulator

Stéphane Junique, Qin Wang, Susanne Almqvist, Bertrand Noharet, and Jan Y. Andersson  »View Author Affiliations

Optics Express, Vol. 15, Issue 14, pp. 8566-8575 (2007)

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We present the design and characterization of a large optical modulator array based on GaAs multiple quantum wells for amplitude and phase modulation. The device shows two high-reflectance states with a phase difference close to 180° for use as a binary phase modulator. It also shows a third, low-reflectance state for use as an amplitude modulator. It is segmented into 64 pixels in a single row, giving an active area of 2mm × 5mm. We discuss the device performance as a ternary binary amplitude and binary phase modulator, including contrast ratio and uniformity, and show that a voltage swing of only 5V is needed to drive it.

© 2007 Optical Society of America

OCIS Codes
(120.5060) Instrumentation, measurement, and metrology : Phase modulation
(230.4110) Optical devices : Modulators
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

Original Manuscript: March 23, 2007
Revised Manuscript: June 17, 2007
Manuscript Accepted: June 18, 2007
Published: June 25, 2007

Stéphane Junique, Qin Wang, Susanne Almqvist, Bertrand Noharet, and Jan Y. Andersson, "Large–area, three–state, binary amplitude and binary phase vertical–cavity multiple quantum well electroabsorption modulator," Opt. Express 15, 8566-8575 (2007)

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