Ultrashort pulse characterization by ultra-thin ZnO, GaN, and AlN crystals
Optics Express, Vol. 15, Issue 15, pp. 9748-9754 (2007)
http://dx.doi.org/10.1364/OE.15.009748
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Abstract
Ultra-thin semiconductor crystals were investigated as nonlinear materials for second-harmonic generation. Nonlinear susceptibilities of sub-micrometer-thick ZnO, GaN, and AlN crystals were measured, and these crystals were used for sub-10-fs pulse measurement by a fringe-resolved autocorrelation method. We found that a one-cycle pulse could be characterized by using these ultra-thin-film crystals.
© 2007 Optical Society of America
OCIS Codes
(310.6860) Thin films : Thin films, optical properties
(320.7100) Ultrafast optics : Ultrafast measurements
(320.7110) Ultrafast optics : Ultrafast nonlinear optics
ToC Category:
Ultrafast Optics
History
Original Manuscript: June 4, 2007
Revised Manuscript: July 16, 2007
Manuscript Accepted: July 18, 2007
Published: July 20, 2007
Citation
Yohei Kobayashi, Dai Yoshitomi, Kakuya Iwata, Hideyuki Takada, and Kenji Torizuka, "Ultrashort pulse characterization by ultra-thin ZnO, GaN, and AlN crystals," Opt. Express 15, 9748-9754 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-15-9748
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