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High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide
Laurent Vivien, Mathieu Rouvière, Jean-Marc Fédéli, Delphine Marris-Morini, Jean François Damlencourt, Juliette Mangeney, Paul Crozat, Loubna El Melhaoui, Eric Cassan, Xavier Le Roux, Daniel Pascal, and Suzanne Laval »View Author Affiliations
Laurent Vivien,1
Mathieu Rouvière,1,2
Jean-Marc Fédéli,3
Delphine Marris-Morini,1
Jean-François Damlencourt,3
Juliette Mangeney,1
Paul Crozat,1
Loubna El Melhaoui,3
Eric Cassan,1
Xavier Le Roux,1
Daniel Pascal,1
and Suzanne Laval1
1Institut d’Electronique Fondamentale (IEF), CNRS UMR 8622, Bât. 220, Université Paris-Sud XI, F-91405 ORSAY cedex - France.
2Present address: STMicroelectronics16 rue Pierre et Marie Curie 37071 TOURS Cedex 2, France
3CEA-LETI, Minatec, CEA-Grenoble, 17 rue des Martyrs, F-38054 GRENOBLE cedex 9, France.
Optics Express, Vol. 15, Issue 15, pp. 9843-9848 (2007)
http://dx.doi.org/10.1364/OE.15.009843
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Abstract
We report the experimental demonstration of a germanium metal-semiconductor-metal (MSM) photodetector integrated in a SOI rib waveguide. Femtosecond pulse and frequency experiments have been used to characterize such photodetectors. The measured bandwidth under 6V bias is about 25 GHz at 1.55 µm wavelength with a responsivity as high as 1 A/W. The used technological processes are compatible with complementary-metal-oxide-semiconductor (CMOS) technology.
© 2007 Optical Society of America
OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(130.1750) Integrated optics : Components
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects
(230.5160) Optical devices : Photodetectors
ToC Category:
Integrated Optics
History
Original Manuscript: March 14, 2007
Revised Manuscript: May 14, 2007
Manuscript Accepted: June 8, 2007
Published: July 20, 2007
Citation
Laurent Vivien, Mathieu Rouvière, Jean-Marc Fédéli, Delphine Marris-Morini, Jean François Damlencourt, Juliette Mangeney, Paul Crozat, Loubna El Melhaoui, Eric Cassan, Xavier Le Roux, Daniel Pascal, and Suzanne Laval, "High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide," Opt. Express 15, 9843-9848 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-15-9843
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Altieri, A.
Assanto, G.
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Bouchier, D.
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Cannon, D.D.
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Debarre, D.
Dehlinger, G.
Dosunmu, O.I.
El Melhaoui, L.
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Fang, A.
Fédéli, J-M.
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- S. Fama, L. Colace, G. Masini, G. Assanto, H.-C. Luan, High performance germanium-on-silicon detectors for optical communications, Appl. Phys Lett. 81, 586-588 (2002). [CrossRef]
- J. Oh, S.K. Baanerjee, J.C. Campbell, Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers, IEEE Photon. Technol. Lett. 16, 581-583 (2004). [CrossRef]
- M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, E. Kasper, Ge-on-Si Vertical Incidence Photodiodes with 39-GHz bandwidth, IEEE Photon. Technol. Lett. 17, 1510-1512 (2005). [CrossRef]
- J-M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J-M. Fédéli, M. Rouvière, L. Vivien, S. Laval, Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-µm photodetection, J. App. Phys. 95, 5905-5907 (2004). [CrossRef]
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- O.I. Dosunmu, D.D. Cannon, M.K. Emsley, B. Ghyselen, J. Liu, L.C. Kimerling, M. Selim Ünlü, Resonant Cavity Enhanced Ge Photodetectors for 1550nm Operation on Reflecting Si Substrates, IEEE J. Sel. Top. Quantum Electron. 10, 694-701 (2004). [CrossRef]
- D. Marris-Morini, X. Le Roux, L. Vivien, E. Cassan, D. Pascal, M. Halbwax, S. Maine, S. Laval, Optical modulation by carrier depletion in a silicon PIN diode, Opt. Express 14, 10838-10843 (2006). [CrossRef] [PubMed]
- D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J-M. Fédéli, L. El Melhaoui, Ultra low loss of 10 successive divisions using silicon-on-insulator microwaguides, Appl. Phys. Lett. 87, 211102-211104 (2005). [CrossRef]
- M. Rouvière, M. Halbwax, J-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J-M. Hartmann, S. Laval, Integration of germanium waveguide photodetectors for intrachip optical interconnects, Opt. Eng. 44, 75402-75406 (2005). [CrossRef]
- M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822-826 (2005). [CrossRef]
- E. Cassan, D. Marris, M. Rouviere, S. Laval, L. Vivien, A. Koster, "Comparison Between Electrical and Optical Clock Distribution for CMOS Integrated Circuits," Opt. Eng. 44, 105402-1 - 105402-10 (2005). [CrossRef]
- M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, J-M. Fédéli, J.F. Damlencourt, J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109-231111 (2005) [CrossRef]
- L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, M. Heitzmann, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, App. Phys. Lett. 85, 701-703 (2004). [CrossRef]
- S. Lardenois, D. Pascal, L. Vivien, E. Cassan, S. Laval, R. Orobtchouk, M. Heitzmann, N Bouzaida, L. Mollard, Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors, Opt. Lett. 28, 1150-1152 (2003). [CrossRef] [PubMed]
- M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822-826 (2005). [CrossRef]
- M. Rouvière, M. Halbwax, J-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J-M. Hartmann, S. Laval, Integration of germanium waveguide photodetectors for intrachip optical interconnects, Opt. Eng. 44, 75402-75406 (2005). [CrossRef]
- L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, M. Heitzmann, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, App. Phys. Lett. 85, 701-703 (2004). [CrossRef]
- G. Dehlinger, S.J. Koester, J.D. Schaub, J.O. Chu, Q.C. Ouyang, A. Grill, High-speed germanium-on-SOI lateral PIN photodiodes, IEEE Photon. Technol. Letters 16, 2547-2549 (2004). [CrossRef]
- M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822-826 (2005). [CrossRef]
- H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, M. Paniccia, An all -silicon Raman laser, Nature 433, 292-294 (2005). [CrossRef] [PubMed]
- H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, M. Paniccia, A continuous-wave Raman silicon laser, Nature 433, 725-728 (2005). [CrossRef] [PubMed]
- A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, M. Paniccia, A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitorNature 427, 615-618 (2004). [CrossRef] [PubMed]
- L. Colace, G. Masini, A. Altieri, G. Assanto, Waveguide photodetectors for the near infrared in polycristalline germanium on silicon, IEEE Photon. Technol. Lett. 18, 1094-1096 (2006) [CrossRef]
- S. Fama, L. Colace, G. Masini, G. Assanto, H.-C. Luan, High performance germanium-on-silicon detectors for optical communications, Appl. Phys Lett. 81, 586-588 (2002). [CrossRef]
- M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, J-M. Fédéli, J.F. Damlencourt, J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109-231111 (2005) [CrossRef]
- M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, J-M. Fédéli, J.F. Damlencourt, J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109-231111 (2005) [CrossRef]
- M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822-826 (2005). [CrossRef]
- G. Dehlinger, S.J. Koester, J.D. Schaub, J.O. Chu, Q.C. Ouyang, A. Grill, High-speed germanium-on-SOI lateral PIN photodiodes, IEEE Photon. Technol. Letters 16, 2547-2549 (2004). [CrossRef]
- O.I. Dosunmu, D.D. Cannon, M.K. Emsley, B. Ghyselen, J. Liu, L.C. Kimerling, M. Selim Ünlü, Resonant Cavity Enhanced Ge Photodetectors for 1550nm Operation on Reflecting Si Substrates, IEEE J. Sel. Top. Quantum Electron. 10, 694-701 (2004). [CrossRef]
- D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J-M. Fédéli, L. El Melhaoui, Ultra low loss of 10 successive divisions using silicon-on-insulator microwaguides, Appl. Phys. Lett. 87, 211102-211104 (2005). [CrossRef]
- O.I. Dosunmu, D.D. Cannon, M.K. Emsley, B. Ghyselen, J. Liu, L.C. Kimerling, M. Selim Ünlü, Resonant Cavity Enhanced Ge Photodetectors for 1550nm Operation on Reflecting Si Substrates, IEEE J. Sel. Top. Quantum Electron. 10, 694-701 (2004). [CrossRef]
- S. Fama, L. Colace, G. Masini, G. Assanto, H.-C. Luan, High performance germanium-on-silicon detectors for optical communications, Appl. Phys Lett. 81, 586-588 (2002). [CrossRef]
- H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, M. Paniccia, A continuous-wave Raman silicon laser, Nature 433, 725-728 (2005). [CrossRef] [PubMed]
- H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, M. Paniccia, An all -silicon Raman laser, Nature 433, 292-294 (2005). [CrossRef] [PubMed]
- D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J-M. Fédéli, L. El Melhaoui, Ultra low loss of 10 successive divisions using silicon-on-insulator microwaguides, Appl. Phys. Lett. 87, 211102-211104 (2005). [CrossRef]
- M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, J-M. Fédéli, J.F. Damlencourt, J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109-231111 (2005) [CrossRef]
- L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, M. Heitzmann, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, App. Phys. Lett. 85, 701-703 (2004). [CrossRef]
- J-M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J-M. Fédéli, M. Rouvière, L. Vivien, S. Laval, Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-µm photodetection, J. App. Phys. 95, 5905-5907 (2004). [CrossRef]
- M.A. Foster, A.C. Turner, J.E. Sharping, S. Schimdt, M. Lipson, A.L., Gaeta, Broad-band optical parametric gain on a silicon photonic chip, Nature 441, 960-963 (2006). [CrossRef] [PubMed]
- O.I. Dosunmu, D.D. Cannon, M.K. Emsley, B. Ghyselen, J. Liu, L.C. Kimerling, M. Selim Ünlü, Resonant Cavity Enhanced Ge Photodetectors for 1550nm Operation on Reflecting Si Substrates, IEEE J. Sel. Top. Quantum Electron. 10, 694-701 (2004). [CrossRef]
- G. Dehlinger, S.J. Koester, J.D. Schaub, J.O. Chu, Q.C. Ouyang, A. Grill, High-speed germanium-on-SOI lateral PIN photodiodes, IEEE Photon. Technol. Letters 16, 2547-2549 (2004). [CrossRef]
- H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, M. Paniccia, An all -silicon Raman laser, Nature 433, 292-294 (2005). [CrossRef] [PubMed]
- H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, M. Paniccia, A continuous-wave Raman silicon laser, Nature 433, 725-728 (2005). [CrossRef] [PubMed]
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App. Phys. Lett.
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IEEE Photon. Technol. Letters
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Opt. Eng.
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Proc. IEEE
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2007, Liu, Opt. Express
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- M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, E. Kasper, Ge-on-Si Vertical Incidence Photodiodes with 39-GHz bandwidth, IEEE Photon. Technol. Lett. 17, 1510-1512 (2005). [CrossRef]
- M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, J-M. Fédéli, J.F. Damlencourt, J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109-231111 (2005) [CrossRef]
- E. Cassan, D. Marris, M. Rouviere, S. Laval, L. Vivien, A. Koster, "Comparison Between Electrical and Optical Clock Distribution for CMOS Integrated Circuits," Opt. Eng. 44, 105402-1 - 105402-10 (2005). [CrossRef]
- Q. Xu, B. Schmidt, S. Pradhan, M. Lipson, Micrometre-scale silicon electro-optic modulator, Nature 435, 325-327 (2005). [CrossRef] [PubMed]
- D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J-M. Fédéli, L. El Melhaoui, Ultra low loss of 10 successive divisions using silicon-on-insulator microwaguides, Appl. Phys. Lett. 87, 211102-211104 (2005). [CrossRef]
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- H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, M. Paniccia, A continuous-wave Raman silicon laser, Nature 433, 725-728 (2005). [CrossRef] [PubMed]
- M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822-826 (2005). [CrossRef]
- M. Rouvière, M. Halbwax, J-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J-M. Hartmann, S. Laval, Integration of germanium waveguide photodetectors for intrachip optical interconnects, Opt. Eng. 44, 75402-75406 (2005). [CrossRef]
- G. Dehlinger, S.J. Koester, J.D. Schaub, J.O. Chu, Q.C. Ouyang, A. Grill, High-speed germanium-on-SOI lateral PIN photodiodes, IEEE Photon. Technol. Letters 16, 2547-2549 (2004). [CrossRef]
- O.I. Dosunmu, D.D. Cannon, M.K. Emsley, B. Ghyselen, J. Liu, L.C. Kimerling, M. Selim Ünlü, Resonant Cavity Enhanced Ge Photodetectors for 1550nm Operation on Reflecting Si Substrates, IEEE J. Sel. Top. Quantum Electron. 10, 694-701 (2004). [CrossRef]
- J-M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J-M. Fédéli, M. Rouvière, L. Vivien, S. Laval, Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-µm photodetection, J. App. Phys. 95, 5905-5907 (2004). [CrossRef]
- L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, M. Heitzmann, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, App. Phys. Lett. 85, 701-703 (2004). [CrossRef]
- G.T. Reed, The optical age of silicon, Nature 427, 595-596 (2004).
- A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, M. Paniccia, A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitorNature 427, 615-618 (2004). [CrossRef] [PubMed]
- J. Oh, S.K. Baanerjee, J.C. Campbell, Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers, IEEE Photon. Technol. Lett. 16, 581-583 (2004). [CrossRef]
- Y. Ishikawa, K. Wada, D.D. Cannan, L. Jifeng, D.L. Hsin-Chiao, L.C. Kimerling, Strain-induced band gap shrinkage in Ge grown on Si substrate, Appl. Phys. Lett. 82, 2044-2046 (2002). [CrossRef]
- S. Fama, L. Colace, G. Masini, G. Assanto, H.-C. Luan, High performance germanium-on-silicon detectors for optical communications, Appl. Phys Lett. 81, 586-588 (2002). [CrossRef]
- D. A. B. Miller, Optical Interconnects to Silicon, IEEE J. Sel. Top. Quantum Electron. 6, 1312-1317 (2000). [CrossRef]
- R.A. Soref, Silicon-based optoelectronics, Proc. IEEE 81, 1687-1706 (1993), [CrossRef]
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