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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 16 — Aug. 6, 2007
  • pp: 10052–10060

Room temperature lasing of InAs/GaAs quantum dots in the whispering gallery modes of a silica microsphere

Sébastien Steiner, Jean Hare, Valérie Lefèvre-Seguin, and Jean-Michel Gérard  »View Author Affiliations


Optics Express, Vol. 15, Issue 16, pp. 10052-10060 (2007)
http://dx.doi.org/10.1364/OE.15.010052


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Abstract

We have achieved low threshold lasing of self-assembled InAs/GaAs quantum dots coupled to the evanescent wave of the high-Q whispering gallery modes of a silica microsphere. In spite of high temperature and Q-spoiling of whispering gallery modes due to diffusion and refraction on the high index semiconductor sample, room temperature lasing is obtained with less than 100 quantum dots. This result highlights the feasibility and interest of combining self-assembled quantum dots and microspheres in view of cavity-quantum electrodynamics experiments.

© 2007 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(140.3410) Lasers and laser optics : Laser resonators
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.6030) Materials : Silica
(270.5580) Quantum optics : Quantum electrodynamics

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: March 9, 2007
Revised Manuscript: April 30, 2007
Manuscript Accepted: April 30, 2007
Published: July 26, 2007

Citation
Sébastien Steiner, Jean Hare, Valérie Lefèvre-Seguin, and Jean-Michel Gérard, "Room temperature lasing of InAs/GaAs quantum dots in the whispering gallery modes of a silica microsphere," Opt. Express 15, 10052-10060 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-16-10052


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  38. Even at 778 nm the large imaginary part of ND. 3.67+i 0.29 gives r..0.78+i 0.54, leading to the same conclusion.
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