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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 2 — Jan. 22, 2007
  • pp: 623–628

Design of monolithically integrated GeSi electro-absorption modulators and photodetectors on an SOI platform

Jifeng Liu, Dong Pan, Samerkhae Jongthammanurak, Kazumi Wada, Lionel C. Kimerling, and Jurgen Michel  »View Author Affiliations

Optics Express, Vol. 15, Issue 2, pp. 623-628 (2007)

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We present a design of monolithically integrated GeSi electro-absorption modulators and photodetectors for electronic-photonic integrated circuits on a silicon-on-insulator (SOI) platform. The GeSi electro-absorption modulator is based on the Franz-Keldysh effect, and the GeSi composition is chosen for optimal performance around 1550 nm. The designed modulator device is butt-coupled to Si(core)/SiO2(cladding) high index contrast waveguides, and has a predicted 3 dB bandwidth of >50 GHz and an extinction ratio of 10 dB. The same device structure can also be used for a waveguide-coupled photodetector with a predicted responsivity of > 1 A/W and a 3 dB bandwidth of > 35 GHz. Use of the same GeSi composition and device structure allows efficient monolithic process integration of the modulators and the photodetectors on an SOI platform.

© 2007 Optical Society of America

OCIS Codes
(160.1890) Materials : Detector materials
(160.2100) Materials : Electro-optical materials
(230.4110) Optical devices : Modulators
(230.5160) Optical devices : Photodetectors
(230.7370) Optical devices : Waveguides
(250.3140) Optoelectronics : Integrated optoelectronic circuits

ToC Category:
Optical Devices

Original Manuscript: October 24, 2006
Revised Manuscript: December 22, 2006
Manuscript Accepted: January 10, 2007
Published: January 22, 2007

Jifeng Liu, Dong Pan, Samerkhae Jongthammanurak, Kazumi Wada, Lionel C. Kimerling, and Jurgen Michel, "Design of monolithically integrated GeSi electro-absorption modulators and photodetectors on a SOI platform," Opt. Express 15, 623-628 (2007)

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