Sub-micron periodic structuring of sapphire by laser induced backside wet etching technique
Optics Express, Vol. 15, Issue 4, pp. 1428-1433 (2007)
http://dx.doi.org/10.1364/OE.15.001428
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Abstract
The periodic structuring of sapphire, by using laser induced backside wet etching technique (LIBWE) and 266 nm, 150 ps Nd:YAG laser radiation, is demonstrated here for first time. Sub-micron period Bragg reflectors are successfully patterned in sapphire wafers using modest energy densities and number of pulses. The gratings are characterized using diffraction efficiency measurements, AFM, and SEM. Issues related to the ablation process and to the phase mask holography are presented and discussed. The experimental results presented depict that the applied method is capable to produce relief structures of depth as deep as 100 nm, while maintaining high resolutions, close to the thermal diffusion length of the material corresponding to the ultrashort pulse duration.
© 2007 Optical Society of America
OCIS Codes
(050.1950) Diffraction and gratings : Diffraction gratings
(160.4670) Materials : Optical materials
(220.4000) Optical design and fabrication : Microstructure fabrication
ToC Category:
Diffraction and Gratings
History
Original Manuscript: December 21, 2006
Revised Manuscript: January 24, 2007
Manuscript Accepted: January 24, 2007
Published: February 19, 2007
Citation
Stavros Pissadakis, Rico Böhme, and Klaus Zimmer, "Sub-micron periodic structuring of sapphire by
laser induced backside wet etching technique," Opt. Express 15, 1428-1433 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-4-1428
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