Single mode condition and modes discrimination in photonic-crystal 1.3 μm AlInGaAs/InP VCSEL
Optics Express, Vol. 15, Issue 9, pp. 5604-5609 (2007)
http://dx.doi.org/10.1364/OE.15.005604
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Abstract
We determine the single mode condition and analyze the modes discrimination of 1.3 μm InP based photonic-crystal vertical-cavity surface-emitting diode laser. To this aim we apply the fully vectorial, three dimensional Plane Wave Admittance Method and analyze a broad range of photonic-crystal parameters such as hole etching depth, distance between the holes and their diameters.
© 2007 Optical Society of America
OCIS Codes
(140.3430) Lasers and laser optics : Laser theory
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.7260) Optoelectronics : Vertical cavity surface emitting lasers
ToC Category:
Lasers and Laser Optics
History
Original Manuscript: March 1, 2007
Revised Manuscript: April 16, 2007
Manuscript Accepted: April 17, 2007
Published: April 24, 2007
Citation
Tomasz Czyszanowski, Maciej Dems, and Krassimir Panajotov, "Single mode condition and modes discrimination in photonic-crystal 1.3 μm AlInGaAs/InP VCSEL," Opt. Express 15, 5604-5609 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-9-5604
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References
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