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Optics Express

Optics Express

  • Editor: C. Martijin de Sterke
  • Vol. 15, Iss. 9 — Apr. 30, 2007
  • pp: 5860–5865

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN quantum wells

Yan Li, Anirban Bhattacharyya, Christos Thomidis, Theodore D. Moustakas, and Roberto Paiella  »View Author Affiliations

Optics Express, Vol. 15, Issue 9, pp. 5860-5865 (2007)

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We present the design, fabrication, and characterization of III-nitride quantum-well waveguides optimized for nonlinear-optical switching via intersubband transitions. A dielectric structure consisting of an AlN lower cladding and a GaN cap layer allows minimizing the propagation losses while maintaining a large modal overlap with the quantum-well active layer. A strong nonlinear saturation of the intersubband absorption near 1.55 μm is demonstrated at record low input powers for these materials; in particular, a 3-dB saturation pulse energy of less than 10 pJ with 240-fs pulses is measured. Combined with the well established sub-picosecond recovery lifetimes of intersubband absorption in III-nitride quantum wells, these results are very promising for all-optical switching applications in future ultrafast fiber-optic communication networks.

© 2007 Optical Society of America

OCIS Codes
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(230.7370) Optical devices : Waveguides

ToC Category:
Optical Devices

Original Manuscript: March 23, 2007
Revised Manuscript: April 20, 2007
Manuscript Accepted: April 25, 2007
Published: April 27, 2007

Yan Li, Anirban Bhattacharyya, Christos Thomidis, Theodore D. Moustakas, and Roberto Paiella, "Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN quantum wells," Opt. Express 15, 5860-5865 (2007)

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