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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 10 — May. 12, 2008
  • pp: 6889–6895

A polarization-modulation method for the near-field mapping of laterally grown InGaN samples.

Ruggero Micheletto, Daisuke Yamada, Maria Allegrini, and Yoichi Kawakami  »View Author Affiliations

Optics Express, Vol. 16, Issue 10, pp. 6889-6895 (2008)

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Epitaxial Laterally overgrown (ELOG) InGaN materials are investigated using a polarization modulated scanning near-field optical microscope. The authors found that luminescence has spatial inhomogeneities and it is partially polarized. Near-field photoluminescence shows polarization phase fluctuation up to 45 degrees over adjacent domains. These results point toward the existence of asymmetries in carrier confinement due to structural anisotropic strain within the framework of the ELOG structure.

© 2008 Optical Society of America

OCIS Codes
(130.5990) Integrated optics : Semiconductors
(250.5230) Optoelectronics : Photoluminescence
(180.4243) Microscopy : Near-field microscopy
(240.5440) Optics at surfaces : Polarization-selective devices

ToC Category:

Original Manuscript: February 8, 2008
Revised Manuscript: March 28, 2008
Manuscript Accepted: April 5, 2008
Published: April 30, 2008

Ruggero Micheletto, Daisuke Yamada, Maria Allegrini, and Yoichi Kawakami, "A polarization-modulation method for the near-field mapping of laterally grown InGaN samples," Opt. Express 16, 6889-6895 (2008)

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