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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 14 — Jul. 7, 2008
  • pp: 10849–10857

Effect of active-layer structures on temperature characteristics of InGaN blue laser diodes

Han-Youl Ryu and Kyoung-Ho Ha  »View Author Affiliations


Optics Express, Vol. 16, Issue 14, pp. 10849-10857 (2008)
http://dx.doi.org/10.1364/OE.16.010849


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Abstract

We investigate temperature characteristics of 445-nm-emitting InGaN blue laser diodes (LDs) with several types of active-layer structures. The double quantum-well (QW) LD structures having an n-type doped barrier show negative or very high characteristic temperature depending on the barrier In composition. On the contrary, the double QW structures having an undoped barrier and the single QW structure show normal temperature dependence of LD characteristics. From the simulation of carrier density and optical gain, it is found that the anomalous temperature characteristics of blue LDs are closed related to the inhomogeneous hole distribution between QWs due to the low hole mobility of InGaN materials.

© 2008 Optical Society of America

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.6810) Lasers and laser optics : Thermal effects
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: May 21, 2008
Revised Manuscript: June 30, 2008
Manuscript Accepted: June 30, 2008
Published: July 3, 2008

Citation
Han-Youl Ryu and Kyoung-Ho Ha, "Effect of active-layer structures on temperature characteristics of InGaN blue laser diodes," Opt. Express 16, 10849-10857 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-14-10849


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References

  1. T. Kozaki, H. Matsumura, Y. Sugimoto, S. Nagahama, and T. Mukai, "High-power and wide wavelength range GaN-based laser diodes," Proc. SPIE 6133, 613306 (2006). [CrossRef]
  2. H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. Park, and J. I. Shim, "High-performance blue InGaN lase diodes with single-quantum-well active layers," IEEE Photon. Technol. Lett. 19, 1717-1719 (2007). [CrossRef]
  3. U. Strau?, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, U. T. Schwarz, "True blue InGaN laser for pico size projectors," Proc. SPIE 6894, 689417 (2008). [CrossRef]
  4. T. Miyoshi, T. Kozaki, T. Yanamoto, Y. Fujimura, S. Nagahama, and T. Mukai, "GaN-based high-output-power blue laser diodes for display applications," J. Soc. Inf. Disp. 15, 157-160 (2007). [CrossRef]
  5. M. Ohta, Y. Ohizumi, Y. Hoshina, T. Tanaka, Y. Yabuki, K. Funato, S. Tomiya, S. Goto, and M. Ikeda, "High-power pure blue laser diodes," Phys. Status Solidi A 203, 2068-2072 (2007). [CrossRef]
  6. M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, "Continuous-wave operation of blue laser diodes based on nonpolar m-plane gallium nitride," J. Appl. Phys. 1, 011102 (2008). [CrossRef]
  7. M. Ikeda, T. Mizuno, M. Takeya, S. Goto, S. Ikeda, T. Fujimoto, Y. Ohfuji, and T. Hashizu, "High-power GaN-based semiconductor lasers," Phys. Status Solidi State C  1, 1461-1467 (2004). [CrossRef]
  8. M. Shono, Y. Nomura, and Y. Bessho, "High-power blue-violet laser diode fabricated on a GaN substrate," Proc. SPIE 5365, 282 (2004). [CrossRef]
  9. T. ?wietlik, G. Franssen, P. Wi?niewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczy?ski, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, and P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, "Anomalous temperature characteristics of single wide quantume well InGaN laser diode," Appl. Phys. Lett. 88, 071121 (2006). [CrossRef]
  10. H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, "Highly stable temperature characteristics of InGaN blue laser diodes," Appl. Phys. Lett. 89, 031122 (2006). [CrossRef]
  11. Y. K. Kuo and Y. A. Chang, "Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance," IEEE J. Quantum Electron. 40, 437-444 (2004). [CrossRef]
  12. S. M. Thahab, H. Abu Hassan, and Z. Hassan, "Performance and optical characteristic of InGaN MQWs laser diodes," Opt. Express 15, 2380-2390 (2007). [CrossRef] [PubMed]
  13. H. Y. Ryu, K. H. Ha, J. H. Chae, O. H. Nam, and Y. J. Park, "Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics," Appl. Phys. Lett. 87, 093506 (2005). [CrossRef]
  14. J. Y. Chang and Y. K. Kuo, "Simulation of blue InGaN quantum-well lasers," J. Appl. Phys. 93, 4992-4998 (2003). [CrossRef]
  15. S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, and M. Ikeda, "Recent progress in high-power blue-violet lasers," IEEE J. Sel. Top Quantum Electron. 9, 1252-1259 (2003). [CrossRef]
  16. J. Piprek and S. Nakamura, "Physics of high-power InGaN/GaN lasers," IEE Proc. :Optoelectron. 149, 145-151 (2002). [CrossRef]
  17. S. H. Yen, Y. K. Kuo, M. L. Tsai, and T. C. Hsu, "Investigation of violet InGaN laser diodes with normal and reversed polarizations," Appl. Phys. Lett. 91, 201118 (2007). [CrossRef]
  18. H. Y. Ryu, "Effect of ridge shape on the fundamental single-mode operation of InGaN laser diode structures," J. Korean Phys. Soc. 52, 1779-1785 (2008). [CrossRef]
  19. I. Vurgaftman and J. R. Meyer, "Band parameters for nitrogen-containing semiconductors," J. Appl. Phys. 94, 3675-3696 (2003). [CrossRef]

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