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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 2 — Jan. 21, 2008
  • pp: 573–578

Three-dimensional control of optical waveguide fabrication in silicon

Ee Jin Teo, Andrew A. Bettiol, Mark B. H. Breese, Pengyuan Yang, Goran Z. Mashanovich, William R. Headley, Graham T. Reed, and Daniel J. Blackwood  »View Author Affiliations

Optics Express, Vol. 16, Issue 2, pp. 573-578 (2008)

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In this paper, we report a direct-write technique for three-dimensional control of waveguide fabrication in silicon. Here, a focused beam of 250 keV protons is used to selectively slow down the rate of porous silicon formation during subsequent anodization, producing a silicon core surrounded by porous silicon cladding. The etch rate is found to depend on the irradiated dose, increasing the size of the core from 2.5 µm to 3.5 µm in width, and from 1.5 µm to 2.6 µm in height by increasing the dose by an order of magnitude. This ability to accurately control the waveguide profile with the ion dose at high spatial resolution provides a means of producing three-dimensional silicon waveguide tapers. Propagation losses of 6.7 dB/cm for TE and 6.8 dB/cm for TM polarization were measured in linear waveguides at the wavelength of 1550 nm.

© 2008 Optical Society of America

OCIS Codes
(130.3060) Integrated optics : Infrared
(130.5990) Integrated optics : Semiconductors
(220.4000) Optical design and fabrication : Microstructure fabrication
(230.7380) Optical devices : Waveguides, channeled

ToC Category:
Optical Design and Fabrication

Original Manuscript: November 12, 2007
Revised Manuscript: December 26, 2007
Manuscript Accepted: January 2, 2008
Published: January 7, 2008

Ee J. Teo, Andrew A. Bettiol, Mark B. Breese, Pengyuan Yang, Goran Z. Mashanovich, William R. Headley, Graham T. Reed, and Daniel J. Blackwood, "Three-dimensional control of optical waveguide fabrication in silicon," Opt. Express 16, 573-578 (2008)

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