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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 21 — Oct. 13, 2008
  • pp: 16754–16765

Improved efficiency Si-photonic attenuator

D. W. Zheng, B. T. Smith, and M. Asghari  »View Author Affiliations


Optics Express, Vol. 16, Issue 21, pp. 16754-16765 (2008)
http://dx.doi.org/10.1364/OE.16.016754


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Abstract

A forward-biased p-i-n diode integrated with a ridge waveguide forms a basic Si attenuator building block. Disruptive power improvement was achieved through a recessed contact configuration by limiting the amount of Si volume for carrier recombination. A device model was established by using realistic surface recombination velocities instead of effective carrier lifetime concept to understand the device physics of the afore-mentioned Si attenuator.

© 2008 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(250.7360) Optoelectronics : Waveguide modulators
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

History
Original Manuscript: June 27, 2008
Revised Manuscript: September 20, 2008
Manuscript Accepted: September 29, 2008
Published: October 7, 2008

Citation
D. W. Zheng, B. T. Smith, and M. Asghari, "Improved efficiency Si-photonic attenuator," Opt. Express 16, 16754-16765 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-21-16754


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References

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