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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 23 — Nov. 10, 2008
  • pp: 18646–18656

Growth parameter optimization for fast quantum dot SESAMs

D. J. H. C. Maas, A.-R. Bellancourt, M. Hoffmann, B. Rudin, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller  »View Author Affiliations

Optics Express, Vol. 16, Issue 23, pp. 18646-18656 (2008)

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Semiconductor saturable absorber mirrors (SESAMs) using quantum dot (QD) absorbers exhibit a larger design freedom than standard quantum well absorbers. The additional parameter of the dot density in combination with the field enhancement allows for an independent control of saturation fluence and modulation depth. We present the first detailed study of the effect of QD growth parameters and post growth annealing on the macroscopic optical SESAM parameters, measuring both nonlinear reflectivity and recombination dynamics. We studied a set of self-assembled InAs QD-SESAMs optimized for an operation wavelength around 960 nm with varying dot density and growth temperature. We confirm that the modulation depth is controlled by the dot density. We present design guidelines for QD-SESAMs with low saturation fluence and fast recovery, which are for example important for modelocking of vertical external cavity surface emitting lasers (VECSELs).

© 2008 Optical Society of America

OCIS Codes
(140.4050) Lasers and laser optics : Mode-locked lasers
(230.4320) Optical devices : Nonlinear optical devices

ToC Category:
Lasers and Laser Optics

Original Manuscript: August 15, 2008
Revised Manuscript: October 20, 2008
Manuscript Accepted: October 26, 2008
Published: October 28, 2008

D. J. H. C. Maas, A. R. Bellancourt, M. Hoffmann, B. Rudin, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, "Growth parameter optimization for fast quantum dot SESAMs," Opt. Express 16, 18646-18656 (2008)

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