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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 23 — Nov. 10, 2008
  • pp: 18739–18744

Femtosecond pulse generation around 1500nm using a GaInNAsSb SESAM

N. K. Metzger, C. G. Leburn, A. A. Lagatsky, C. T. A. Brown, S. Calvez, D. Burns, H. D. Sun, M. D. Dawson, M. Le Dû, J. C. Harmand, and W. Sibbett  »View Author Affiliations

Optics Express, Vol. 16, Issue 23, pp. 18739-18744 (2008)

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The operation of a femtosecond Cr4+:YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230fs pulses centred at 1528nm were generated at an average output power of 280mW. The SESAM exhibited a low saturation fluence of 10µJ/cm2 and a short recovery time of 12ps.

© 2008 Optical Society of America

OCIS Codes
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.7090) Lasers and laser optics : Ultrafast lasers
(230.4320) Optical devices : Nonlinear optical devices

ToC Category:
Lasers and Laser Optics

Original Manuscript: September 15, 2008
Revised Manuscript: October 20, 2008
Manuscript Accepted: October 20, 2008
Published: October 29, 2008

N. K. Metzger, C. G. Leburn, A. A. Lagatsky, C. T. Brown, S. Calvez, D. Burns, H. D. Sun, M. D. Dawson, J. C. Harmand, and W. Sibbett, "Femtosecond pulse generation around 1500nm using a GaInNAsSb SESAM," Opt. Express 16, 18739-18744 (2008)

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