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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 7 — Mar. 31, 2008
  • pp: 5158–5163

Combination of passivated Si anode with phosphor doped organic to realize highly efficient Si-based electroluminescence

W. Q. Zhao, G. Z. Ran, Z. W. Liu, Z. Q. Bian, K. Sun, W. J. Xu, C. H. Huang, and G. G. Qin  »View Author Affiliations

Optics Express, Vol. 16, Issue 7, pp. 5158-5163 (2008)

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Silicon light source plays a key role in silicon optoelectronics, but its realization is an extremely challenging task. Although there are long-term intensive efforts to this topic, the power conversion efficiency (PCE) of the silicon-based electroluminescence is still no more than 1%. In this present report, a highly efficient silicon light source has been achieved. The device structure is p-Si (5 Ωcm)/ SiO2(~2nm)/NPB/CBP: (ppy)2Ir(acac)/Bphen/Bphen: Cs2CO3/Sm/Au. The SiO2 passivated Si is the anode having a suitably high hole-injection ability, and CBP: (ppy)2Ir(acac) is a highly efficient phosphor doped organic material. The device turn-on voltage is 3.2 V. The maximum luminance efficiency and maximum luminous power efficiency reach 69 cd/A and 62 lm/W, respectively, corresponding to a maximum PCE of 12% and an external quantum efficiency of 17%.

© 2008 Optical Society of America

OCIS Codes
(160.4890) Materials : Organic materials
(230.3670) Optical devices : Light-emitting diodes

ToC Category:

Original Manuscript: January 10, 2008
Revised Manuscript: March 17, 2008
Manuscript Accepted: March 18, 2008
Published: March 28, 2008

W. Q. Zhao, G. Z. Ran, Z. W. Liu, Z. Q. Bian, K. Sun, W. J. Xu, C. H. Huang, and G. G. Qin, "Combination of passivated Si anode with phosphor doped organic to realize highly efficient Si-based electroluminescence," Opt. Express 16, 5158-5163 (2008)

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