Longwave plasmonics on doped silicon and silicides
Optics Express, Vol. 16, Issue 9, pp. 6507-6514 (2008)
http://dx.doi.org/10.1364/OE.16.006507
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Abstract
The realization of plasmo-electronic integrated circuits in a silicon chip will be enabled by two new plasmonic materials that are proposed and modeled in this article. The first is ion-implanted Si (n-type or p-type) at the surface of an intrinsic Si chip. The second is a thin-layer silicide such as Pd2Si, NiSi, PtSi2 WSi2 or CoSi2 formed at the Si chip surface. For doping concentrations of 1020 cm-3 and 1021 cm-3, our dispersion calculations show that bound surface plasmon polaritons will propagate with low loss on stripe-shaped plasmonic waveguides over the 10 to 55 µm and 2.8 to 15 µm wavelength ranges, respectively. For Pd2Si/Si plasmonic waveguides, the wavelength range of 0.5 to 7.5 µm is useful and here the propagation lengths are 1 to 2300 µm. For both doped and silicided guides, the SPP mode field extends much more into the air above the stripe than it does into the conductive stripe material.
© 2008 Optical Society of America
OCIS Codes
(160.3130) Materials : Integrated optics materials
(240.6680) Optics at surfaces : Surface plasmons
(310.2790) Thin films : Guided waves
(160.3918) Materials : Metamaterials
(250.5403) Optoelectronics : Plasmonics
ToC Category:
Optics at Surfaces
History
Original Manuscript: February 28, 2008
Revised Manuscript: April 14, 2008
Manuscript Accepted: April 16, 2008
Published: April 23, 2008
Citation
Richard Soref, Robert E. Peale, and Walter Buchwald, "Longwave plasmonics on doped silicon and silicides," Opt. Express 16, 6507-6514 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-9-6507
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