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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 9 — Apr. 28, 2008
  • pp: 6609–6618

Strong optical injection-locked semiconductor lasers demonstrating >100-GHz resonance frequencies and 80-GHz intrinsic bandwidths

Erwin K. Lau, Xiaoxue Zhao, Hyuk-Kee Sung, Devang Parekh, Connie Chang-Hasnain, and Ming C. Wu  »View Author Affiliations

Optics Express, Vol. 16, Issue 9, pp. 6609-6618 (2008)

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By using strong optical injection locking, we report resonance frequency enhancement in excess of 100 GHz in semiconductor lasers. We demonstrate this enhancement in both distributed feedback (DFB) lasers and vertical-cavity surface-emitting lasers (VCSELs), showing the broad applicability of the technique and that the coupling Q is the figure-of-merit for resonance frequency enhancement. We have also identified the key factors that cause low-frequency roll-off in injection-locked lasers. By increasing the slave laser’s DC current bias, we have achieved a record intrinsic 3-dB bandwidth of 80 GHz in VCSELs.

© 2008 Optical Society of America

OCIS Codes
(060.4080) Fiber optics and optical communications : Modulation
(140.3490) Lasers and laser optics : Lasers, distributed-feedback
(140.3520) Lasers and laser optics : Lasers, injection-locked
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7260) Lasers and laser optics : Vertical cavity surface emitting lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: November 26, 2007
Revised Manuscript: March 17, 2008
Manuscript Accepted: March 20, 2008
Published: April 24, 2008

Erwin K. Lau, Xiaoxue Zhao, Hyuk-Kee Sung, Devang Parekh, Connie Chang-Hasnain, and Ming C. Wu, "Strong optical injection-locked semiconductor lasers demonstrating > 100-GHz resonance frequencies and 80-GHz intrinsic bandwidths," Opt. Express 16, 6609-6618 (2008)

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