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Slot waveguides with polycrystalline silicon for electrical injection

Kyle Preston and Michal Lipson

Open Access Open Access

Abstract

We demonstrate horizontal slot waveguides using high-index layers of polycrystalline and single crystalline silicon separated by a 10 nm layer of silicon dioxide. We measure waveguide propagation loss of 7 dB/cm and a ring resonator intrinsic quality factor of 83,000. The electric field of the optical mode is strongly enhanced in the low-index oxide layer, which can be used to induce a strong modal gain when an active material is embedded in the slot. Both high-index layers are made of electrically conductive silicon which can efficiently transport charge to the slot region. The incorporation of conductive silicon materials with high-Q slot waveguide cavities is a key step for realizing electrical tunneling devices such as electrically pumped silicon-based light sources.

©2009 Optical Society of America

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Figures (5)
Fig. 1.
Fig. 1. ∣E∣2 of the fundamental y-polarized quasi-TM slot mode at λ = 1550 nm as calculated by a finite difference mode solver. The high-index regions (bounded by black) have nSi = 3.48 and the slot and cladding have noxide = 1.46. The bottom and top silicon layers are 140 nm tall and 120 nm tall respectively, and the slot is 10 nm tall. The effective index is neff = 1.87 and the slot confinement factor is Γ = 0.28.

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Fig. 2.
Fig. 2. AFM measurement of the polysilicon top surface over a 10 μm square field. The rms roughness is 0.5 nm and the total range is ±3.7 nm from the mean value.

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Fig. 3.
Fig. 3. (a) Dark field STEM (scanning tunneling electron microscope) image of the fabricated material stack. (b) Bright field TEM image of the slot region showing the polycrystalline, amorphous, and single crystalline layers (top to bottom).

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Fig. 4.
Fig. 4. Measurement of propagation loss in slot waveguides using the cutback method. (inset) Single measurement at λ = 1550 nm with a loss of 7.3 ± 0.4 dB/cm.

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Fig. 5.
Fig. 5. (a) Tilted angle SEM (before oxide cladding) and optical microscope image of 100 μm radius ring resonator and bus waveguide. (b) Experimental measurement (dots) of the group index based on the measured free spectral range as a function of wavelength. The comparison with simulation indicates we are operating in the TM-polarized slot mode shown in Fig. 1. (c) Resonance at λ0 = 1552.12 nm with intrinsic quality factor Q0 = 82,000. (inset) Wider sweep showing FSR used to calculate group index in (b).

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Equations (2)

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T = ( a − r ) 2 + 4 π 2 ra L 2 n g 2 λ 0 4 ( λ − λ 0 ) 2 ( 1 − ra ) 2 + 4 π 2 ra L 2 n g 2 λ 0 4 ( λ − λ 0 ) 2 .
Γ = n slot ∬ slot ∣ E ∣ 2 dxdy Z 0 ∬ ∞ Re { E × H } · z ̂ dxdy .
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