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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 10 — May. 11, 2009
  • pp: 8246–8252

Influence of plasma treatment on laser-induced damage characters of HfO2 thin films at 355nm

Dongping Zhang, Congjuan Wang, Ping Fan, Xingmin Cai, Zhuanghao Zheng, Jianda Shao, and Zhengxiu Fan  »View Author Affiliations

Optics Express, Vol. 17, Issue 10, pp. 8246-8252 (2009)

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HfO2 thin films were deposited by e-beam evaporation, and were post-treated with plasma under different flow rate ratios of argon to oxygen. By measuring the surface defect density, weak absorption, laser-induced damage threshold (LIDT) and damage morphology, the influence of the flow rate ratio of argon to oxygen on the laser-induced damage characters of HfO2 thin films were analyzed. The experimental results show that plasma treatment is effective in reducing the surface defect density of thin films. Compared with the as-grown sample, the absorption reduction is obvious after plasma treatment when argon and oxygen flow rate ratio is 5:25, but the absorption increases gradually with the continued increase of argon and oxygen flow rate ratio. LIDT measurements in 1-on-1 mode demonstrate that plasma treatment is not effective in improving LIDT of the samples at 355 nm. Damage morphologies reveal that the LIDT is dominated by nanoscale absorbing defects in subsurface layers, which agrees well with our numerical simulation result based on a spherical absorber model.

© 2009 Optical Society of America

OCIS Codes
(140.3330) Lasers and laser optics : Laser damage
(310.0310) Thin films : Thin films
(310.3840) Thin films : Materials and process characterization

ToC Category:
Thin Films

Original Manuscript: March 13, 2009
Revised Manuscript: April 20, 2009
Manuscript Accepted: April 21, 2009
Published: April 30, 2009

Dongping Zhang, Congjuan Wang, Ping Fan, Xingmin Cai, Zhuanghao Zheng, Jianda Shao, and Zhengxiu Fan, "Influence of plasma treatment on laser-induced damage characters of HfO2 thin films at 355nm," Opt. Express 17, 8246-8252 (2009)

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