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Optics Express

Optics Express

| THE INTERNATIONAL ELECTRONIC JOURNAL OF OPTICS

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 12 — Jun. 8, 2009
  • pp: 10019–10024

Optics InfoBase > Optics Express > Volume 17 > Issue 12 > Page 10019

Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate

Szu-Lin Cheng, Jesse Lu, Gary Shambat, Hyun-Yong Yu, Krishna Saraswat, Jelena Vuckovic, and Yoshio Nishi

Optics Express, Vol. 17, Issue 12, pp. 10019-10024        doi:10.1364/OE.17.010019

» View Full Text: Acrobat PDF (409 KB)

  • OCIS Codes:
  • (160.4760) Materials : Optical properties
  • (230.3670) Optical devices : Light-emitting diodes
ToC Category:
Optical Devices

Citation
Szu-Lin Cheng, Jesse Lu, Gary Shambat, Hyun-Yong Yu, Krishna Saraswat, Jelena Vuckovic, and Yoshio Nishi, "Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate," Opt. Express 17, 10019-10024 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-12-10019

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Abstract

We report the room temperature electroluminescence (EL) at 1.6 μm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a super linear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve better efficiency of the device. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to operate at room temperature or above. These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device.

© 2009 Optical Society of America

» View Full Text: Acrobat PDF (409 KB)

History
Original Manuscript: April 8, 2009
Manuscript Accepted: May 17, 2009
Revised Manuscript: May 14, 2009
Published: May 29, 2009

References

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