Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate
Optics Express, Vol. 17, Issue 12, pp. 10019-10024 doi:10.1364/OE.17.010019
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- OCIS Codes:
- (160.4760) Materials : Optical properties
- (230.3670) Optical devices : Light-emitting diodes
Optical Devices
Citation
Szu-Lin Cheng, Jesse Lu, Gary Shambat, Hyun-Yong Yu, Krishna Saraswat, Jelena Vuckovic, and Yoshio Nishi, "Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate," Opt. Express 17, 10019-10024 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-12-10019
Abstract
We report the room temperature electroluminescence (EL) at 1.6 μm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a super linear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve better efficiency of the device. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to operate at room temperature or above. These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device.
© 2009 Optical Society of America
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History
Original Manuscript: April 8, 2009
Manuscript Accepted: May 17, 2009
Revised Manuscript: May 14, 2009
Published: May 29, 2009
References
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Author Affiliations
Stanford University
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