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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 14 — Jul. 6, 2009
  • pp: 11434–11439

Electrophotoluminescence of sol-gel derived ZnO film: Effect of electric field on near-band-edge photoluminescence

Peiliang Chen, Xiangyang Ma, Yuanyuan Zhang, Dongsheng Li, and Deren Yang  »View Author Affiliations

Optics Express, Vol. 17, Issue 14, pp. 11434-11439 (2009)

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The effect of electric field on near-band-edge (NBE) photoluminescence (PL) of a sol-gel derived ZnO film has been investigated via a SiO2/ZnO/SiO x (x<2) double-barrier structure on Si under different forward biases. A forward current-voltage curve is characterized by a negative-differential-resistance (NDR) region, which follows a normal region. With an increase of forward bias the NBE PL of the ZnO film is enhanced in the normal region, but it is attenuated in the NDR region. The increase of forward bias also causes the NBE PL of the ZnO film to blueshift from ~377.6 to ~374.9 nm no matter how current changes. The mechanism for the effect of bias on the intensity and position of NBE PL of the ZnO film is discussed.

© 2009 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(250.5230) Optoelectronics : Photoluminescence

ToC Category:

Original Manuscript: April 20, 2009
Revised Manuscript: June 12, 2009
Manuscript Accepted: June 20, 2009
Published: June 23, 2009

Peiliang Chen, Xiangyang Ma, Yuanyuan Zhang, Dongsheng Li, and Deren Yang, "Electrophotoluminescence of sol-gel derived ZnO film: Effect of electric field on near-band-edge photoluminescence," Opt. Express 17, 11434-11439 (2009)

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