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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 15 — Jul. 20, 2009
  • pp: 12981–12986

10-Gb/s and 10-km error-free transmission up to 100°C with 1.3-μm wavelength wafer-fused VCSELs

Alexandru Mereuta, Grigore Suruceanu, Andrei Caliman, Vladimir Iacovlev, Alexei Sirbu, and Eli Kapon  »View Author Affiliations

Optics Express, Vol. 17, Issue 15, pp. 12981-12986 (2009)

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10-Gb/s modulation speed and transmission over 10-km SM fiber with BER < 10−11 up to 100°C temperature are achieved with optimized wafer-fused GaAs/AlGaAs-InP/InAlGaAs VCSELs incorporating re-grown tunnel junction. These VCSELs operate in the 1310-nm waveband and emit more than 1-mW single mode power in the full temperature range.

© 2009 OSA

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.7260) Lasers and laser optics : Vertical cavity surface emitting lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: June 1, 2009
Revised Manuscript: July 3, 2009
Manuscript Accepted: July 7, 2009
Published: July 20, 2009

Alexandru Mereuta, Grigore Suruceanu, Andrei Caliman, Vladimir Iacovlev, Alexei Sirbu, and Eli Kapon, "10-Gb/s and 10-km error-free transmission up to 100°C with 1.3-μm wavelength wafer-fused VCSELs," Opt. Express 17, 12981-12986 (2009)

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  1. E. Kapon and A. Sirbu; “Long-Wavelength VCSELs: Power - efficient answer,” Nat. Photonics 3(1), 27–29 (2009). [CrossRef]
  2. Markus-Christian Amann and Werner Hofmann, “Single-mode and tunable VCSELs in the near- to mid-infrared,” Chin. Opt. Lett. 6(10), 743–747 (2008). [CrossRef]
  3. N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. H. Hu, X. S. Liu, M.-J. Li, R. Bhat, and C. E. Zah, “Long Wavelength Vertical Cavity Surface Emitting Lasers on InP with Lattice Matched AlGaInAs/InP DBR Grown by MOCVD,” IEEE J. Sel. Top. Quantum Electron. 11(5), 990–998 (2005). [CrossRef]
  4. A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C. A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity Mode-Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW SM Power and 10-Gb/s Modulation Speed up to 70°C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007). [CrossRef]
  5. A.Sirbu, A.Mereuta, V. Iakovlev, A. Caliman, P. Royo, and E. Kapon, “10 Gbps VCSELs with high single mode output in 1310-nm and 1550-nm wavelength bands,” OFC/NFOEC-2008, paper OThS2, 1–3, (2008).
  6. N. Nishiyama, C. Caneau, J. D. Downie, M. Sauer and C.-E. Zah, “10-Gbps 1.3 and 1.55-µm InP-based VCSELs: 85°C 10-km Error-free Transmission and Room Temperature 40-km Transmission at 1.55-µm with EDC,” OFC-2006, paper PDP23, (2006).
  7. W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Böhm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M.-C. Amann, “10-Gb/s Data Transmission using BCB Passivated InGaAlAs–InP VCSELs,” IEEE Photon. Technol. Lett. 18(2), 424–426 (2006). [CrossRef]
  8. W. Hofmann, M. Müller, G. Böhm, M. Ortsiefer, and M.-C. Amann, “1.55μm InP-based VCSEL with Enhanced Modulation Bandwidht >10 GHz up to 85°C,” OFC/NFOEC-2009, paper OTuK5 (2009).
  9. A. Mereuta, A. Syrbu, V. Iakovlev, A. Rudra, A. Caliman, G. Suruceanu, C. A. Berseth, E. Deichsel, and E. Kapon, “1.5 μm VCSEL structure optimized for high-power and high-temperature operation,” J. Cryst. Growth 272(1-4), 520–525 (2004). [CrossRef]
  10. A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, “1.5-mW Single-Mode operation of wafer-fused 1550-nm VCSELs,” IEEE Photon. Technol. Lett. 16(5), 1230–1232 (2004). [CrossRef]
  11. A. Baecker, S. Odermatt, R. Santschi, F. Roemer, B. Witzigmann, P. Royo, V. Iakovlev, A. Caliman, A. Mereuta, A. Syrbu, and E. Kapon, “Transverse Optical Mode Analysis of Long-wavelength VCSELs for High Single-Mode Power Operation.” 8-th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), paper WB2 (2008).

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