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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 19 — Sep. 14, 2009
  • pp: 16549–16557

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes

Daoxin Dai, Hui-Wen Chen, John E. Bowers, Yimin Kang, Mike Morse, and Mario J. Paniccia  »View Author Affiliations

Optics Express, Vol. 17, Issue 19, pp. 16549-16557 (2009)

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In this work the impedance of separate-absorption-charge-multiplication Ge/Si avalanche photodiodes (APD) is characterized over a large range of bias voltage. An equivalent circuit with an inductive element is presented for modeling the Ge/Si APD. All the parameters for the elements included in the equivalent circuit are extracted by fitting the measured S22 with the genetic algorithm optimization. Due to a resonance in the avalanche region, the frequency response of the APD has a peak enhancement when the bias voltage is relatively high, which is observed in the measurement and agrees with the theoretical calculation shown in this paper.

© 2009 OSA

OCIS Codes
(040.0040) Detectors : Detectors
(040.1345) Detectors : Avalanche photodiodes (APDs)

ToC Category:

Original Manuscript: August 5, 2009
Revised Manuscript: August 27, 2009
Manuscript Accepted: August 27, 2009
Published: September 1, 2009

Daoxin Dai, Hui-Wen Chen, John E. Bowers, Yimin Kang, Mike Morse, and Mario J. Paniccia, "Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes," Opt. Express 17, 16549-16557 (2009)

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