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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 21 — Oct. 12, 2009
  • pp: 18571–18580

Optical modulation in silicon waveguides via charge state control of deep levels

D F Logan, P E Jessop, A P Knights, G Wojcik, and A Goebel  »View Author Affiliations


Optics Express, Vol. 17, Issue 21, pp. 18571-18580 (2009)
http://dx.doi.org/10.1364/OE.17.018571


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Abstract

The control of defect mediated optical absorption at a wavelength of 1550nm via charge state manipulation is demonstrated using optical absorption measurements of indium doped Silicon-On-Insulator (SOI) rib waveguides. These measurements introduce the potential for modulation of waveguide transmission by using the local depletion and injection of free-carriers to change deep-level occupancy. The extinction ratio and modulating speed are simulated for a proposed device structure. A ‘normally-off’ depletion modulator is described with an extinction coefficient limited to 5 dB/cm and switching speeds in excess of 1 GHz. For a carrier injection modulator a fourfold enhancement in extinction ratio is provided relative to free carrier absorption alone. This significant improvement in performance is achieved with negligible increase in driving power but slightly degraded switching speed.

© 2009 OSA

OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(250.4110) Optoelectronics : Modulators

ToC Category:
Optical Devices

History
Original Manuscript: July 29, 2009
Revised Manuscript: September 23, 2009
Manuscript Accepted: September 25, 2009
Published: September 30, 2009

Citation
D F Logan, P E Jessop, A P Knights, G Wojcik, and A Goebel, "Optical modulation in silicon waveguides via charge state control of deep levels," Opt. Express 17, 18571-18580 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-21-18571


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References

  1. A. P. Knights, J. D. B. Bradley, S. H. Gou, and P. E. Jessop, “Silicon-on-insulator waveguide photodetector with self-ion-implantation engineered-enhanced infrared response,” J. Vac. Sci. Technol. A 24(3), 783–786 (2006). [CrossRef]
  2. M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, “CMOS-compatible all-Si high-speed waveguide photodiodes with high responsivity in near-infrared communication band,” IEEE Photon. Technol. Lett. 19(3), 152–154 (2007). [CrossRef]
  3. Y. Liu, C. W. Chow, W. Y. Cheung, and H. K. Tsang, “In-line channel power monitor based on Helium ion implantation in silicon-on-insulator waveguides,” IEEE Photon. Technol. Lett. 18(17), 1882–1884 (2006). [CrossRef]
  4. H. Y. Fan and A. K. Ramdas, “Infrared absorption and photoconductivity in irradiated silicon,” J. Appl. Phys. 30(8), 1127–1134 (1959). [CrossRef]
  5. C. S. Chen and J. C. Corelli, “Infrared spectroscopy of divacancy-associated radiation-induced absorption bands in silicon,” Phys. Rev. B 5(4), 1505–1517 (1972). [CrossRef]
  6. D. Logan, P. E. Jessop, A. P. Knights, R. M. Gwilliam, and M. P. Halsall, “The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides.” in COMMAD 2008 IEEE Proc. Conf. on Optoelectronic and Microelectronic Materials and Devices. (Sydney, Australia, 2008). pp. 152–5.
  7. E. Simoen, C. Claeys, E. Gaubas, and H. Ohyama, “Impact of the divacancy on the generation-recombination properties of 10 MeV proton irradiated Float-Zone silicon diodes,” Nucl. Instrum. Methods Phys. Res. A 439(2-3), 310–318 (2000). [CrossRef]
  8. M. J. Keevers and M. A. Green, “Efficiency improvements of silicon solar cells by the Impurity photovoltaic effect,” J. Appl. Phys. 75(8), 4022–4031 (1994). [CrossRef]
  9. G. J. Parker, S. D. Brotherton, I. Gale, and A. Gill, “Measurement of concentration and photoionization cross section of indium in silicon,” J. Appl. Phys. 54(7), 3926–3929 (1983). [CrossRef]
  10. P. J. Foster, J. K. Doylend, P. Mascher, A. P. Knights, and P. G. Coleman, “Optical attenuation in defect-engineered silicon rib waveguides,” J. Appl. Phys. 99(7), 073101 (2006). [CrossRef]
  11. Silvaco Data Systems Inc, © 1984–2008. [online]. Available: www.silvaco.com .
  12. RSoft Design Group, Inc., © 2002. [online]. Available: www.rsoftdesign.com .
  13. K. Dieter, Schroder, Semiconductor Material and Device Characterization. (John Wiley & Sons, 2006). p. 255–8.
  14. A. Sato, K. Suzuki, H. Horie, and T. Sugii, “Determination of Solid Solubility Limit of In and Sb in Si using Bonded Silicon-On-Insulator (SOI) Substrate.” in Proc. IEEE 1995 Int. Conf. on Microelectronic Test Structures. (Nara, Japan, vol. 8, 1995) pp. 259–263.
  15. J. Liu, U. Jeong, S. Mehta, J. Sherbondy, A. Lo, K. Ha Shim, and J. Eun Lim, “Investigation of Indium Activation by C-V Measurement.” in Proc. IEEE Int. Conf. on Ion Implantation Technology, H. Ryssel et al., ed. (Alpbach, Austria, 2000) pp. 66–69.

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