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Optics Express

Optics Express

| THE INTERNATIONAL ELECTRONIC JOURNAL OF OPTICS

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 22 — Oct. 26, 2009
  • pp: 19371–19381

Optics InfoBase > Optics Express > Volume 17 > Issue 22 > Page 19371

Optical absorption enhancement in silicon nanowire arrays with a large lattice constant for photovoltaic applications

Chenxi Lin and Michelle L. Povinelli

Optics Express, Vol. 17, Issue 22, pp. 19371-19381        doi:10.1364/OE.17.019371

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  • OCIS Codes:
  • (350.6050) Other areas of optics : Solar energy
  • (310.6628) Thin films : Subwavelength structures, nanostructures
ToC Category:
Solar Energy

Citation
Chenxi Lin and Michelle L. Povinelli, "Optical absorption enhancement in silicon nanowire arrays with a large lattice constant for photovoltaic applications," Opt. Express 17, 19371-19381 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-22-19371

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Abstract

In this paper, we use the transfer matrix method to calculate the optical absorptance of vertically-aligned silicon nanowire (SiNW) arrays. For fixed filling ratio, significant optical absorption enhancement occurs when the lattice constant is increased from 100nm to 600nm. The enhancement arises from an increase in field concentration within the nanowire as well as excitation of guided resonance modes. We quantify the absorption enhancement in terms of ultimate efficiency. Results show that an optimized SiNW array with lattice constant of 600nm and wire diameter of 540nm has a 72.4% higher ultimate efficiency than a Si thin film of equal thickness. The enhancement effect can be maintained over a large range of incidence angles.

© 2009 OSA

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History
Original Manuscript: August 17, 2009
Manuscript Accepted: October 3, 2009
Revised Manuscript: September 29, 2009
Published: October 12, 2009

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Author Affiliations

Chenxi Lin, Michelle L. Povinelli

Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA

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