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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 22 — Oct. 26, 2009
  • pp: 20221–20226

Measurement and Modeling of High-Linearity Modified Uni-Traveling Carrier Photodiode with Highly-Doped Absorber

Huapu Pan, Zhi Li, Andreas Beling, and Joe C. Campbell  »View Author Affiliations


Optics Express, Vol. 17, Issue 22, pp. 20221-20226 (2009)
http://dx.doi.org/10.1364/OE.17.020221


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Abstract

The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (< 3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model.

© 2009 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors

ToC Category:
Detectors

History
Original Manuscript: August 28, 2009
Revised Manuscript: October 18, 2009
Manuscript Accepted: October 19, 2009
Published: October 21, 2009

Citation
Huapu Pan, Zhi Li, Andreas Beling, and Joe C. Campbell, "Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber," Opt. Express 17, 20221-20226 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-22-20221


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