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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 24 — Nov. 23, 2009
  • pp: 22201–22208

170 Gbit/s transmission in an erbium-doped waveguide amplifier on silicon

Jonathan D. B. Bradley, Marcia Costa e Silva, Mathilde Gay, Laurent Bramerie, Alfred Driessen, Kerstin Wörhoff, Jean-Claude Simon, and Markus Pollnau  »View Author Affiliations

Optics Express, Vol. 17, Issue 24, pp. 22201-22208 (2009)

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Signal transmission experiments were performed at 170 Gbit/s in an integrated Al2O3:Er3+ waveguide amplifier to investigate its potential application in high-speed photonic integrated circuits. Net internal gain of up to 11 dB was measured for a continuous-wave 1532 nm signal under 1480 nm pumping, with a threshold pump power of 4 mW. A differential group delay of 2 ps between the TE and TM fundamental modes of the 5.7-cm-long amplifier was measured. When selecting a single polarization open eye diagrams and bit error rates equal to those of the transmission system without the amplifier were observed for a 1550 nm signal encoded with a 170 Gbit/s return-to-zero pseudo-random 27-1 bit sequence.

© 2009 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(130.3130) Integrated optics : Integrated optics materials
(140.4480) Lasers and laser optics : Optical amplifiers
(160.5690) Materials : Rare-earth-doped materials

ToC Category:
Integrated Optics

Original Manuscript: September 15, 2009
Revised Manuscript: November 2, 2009
Manuscript Accepted: November 4, 2009
Published: November 19, 2009

Jonathan D. B. Bradley, Marcia Costa e Silva, Mathilde Gay, Laurent Bramerie, Alfred Driessen, Kerstin Wörhoff, Jean-Claude Simon, and Markus Pollnau, "170 Gbit/s transmission in an erbium-doped waveguide amplifier on silicon," Opt. Express 17, 22201-22208 (2009)

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