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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 25 — Dec. 7, 2009
  • pp: 22855–22860

Transient memory effect in the photoluminescence of InGaN single quantum wells

Christian Feldmeier, Masayoshi Abiko, Ulrich T. Schwarz, Yoichi Kawakami, and Ruggero Micheletto  »View Author Affiliations


Optics Express, Vol. 17, Issue 25, pp. 22855-22860 (2009)
http://dx.doi.org/10.1364/OE.17.022855


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Abstract

The transition to maximum photoluminescence of InGaN single quantum wells is a phenomena that has time constants in the range of few seconds. Using a systematic illumination/darkening procedure we found that these characteristics are related to previous stimulations as if the sample has a memory of past illumination events. Choosing opportune time sequences, time constants were observed to vary more than 100%. These facts suggest the presence of carrier trapping/de-trapping processes that act beyond the single illumination event, accumulating over time in a complex effect.

© 2009 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.5230) Optoelectronics : Photoluminescence
(310.5448) Thin films : Polarization, other optical properties

ToC Category:
Optoelectronics

History
Original Manuscript: October 9, 2009
Revised Manuscript: November 24, 2009
Manuscript Accepted: November 24, 2009
Published: November 30, 2009

Citation
Christian Feldmeier, Masayoshi Abiko, Ulrich T. Schwarz, Yoichi Kawakami, and Ruggero Micheletto, "Transient memory effect in the photoluminescence of InGaN single quantum wells," Opt. Express 17, 22855-22860 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-25-22855


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