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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 26 — Dec. 21, 2009
  • pp: 24153–24161

Characterization of nanostructured VO2 thin films grown by magnetron controlled sputtering deposition and post annealing method

Sihai Chen, Jianjun Lai, Jun Dai, Hong Ma, Hongchen Wang, and Xinjian Yi  »View Author Affiliations

Optics Express, Vol. 17, Issue 26, pp. 24153-24161 (2009)

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By magnetron controlled sputtering system, a new nanostructured metastable monoclinic phase VO2 (B) thin film has been fabricated. The testing result shows that this nanostructured VO2 (B) thin film has high temperature coefficient of resistance (TCR) of −7%/K. Scanning electron microscopy measurement shows that the average grain diameter of the VO2 (B) crystallite is between 100 and 250 nm. After post annealed, VO2 (B) crystallite is changed into monoclinic (M) phase VO2 (M) crystallite with the average grain diameter between 20 and 50nm. A set up of testing the thin film switching time is established. The test result shows the switching time is about 50 ms. With the nanostructured VO2 (B) and VO2 (M) thin films, optical switches and high sensitivity detectors will be presented.

© 2009 OSA

OCIS Codes
(310.3840) Thin films : Materials and process characterization
(160.4236) Materials : Nanomaterials

ToC Category:
Thin Films

Original Manuscript: November 16, 2009
Revised Manuscript: December 10, 2009
Manuscript Accepted: December 10, 2009
Published: December 17, 2009

Sihai Chen, Jianjun Lai, Jun Dai, Hong Ma, Hongchen Wang, and Xinjian Yi, "Characterization of nanostructured VO2 thin films grown by magnetron controlled sputtering deposition and post annealing method," Opt. Express 17, 24153-24161 (2009)

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