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Optics Express

Optics Express

  • Vol. 17, Iss. 7 — Mar. 30, 2009
  • pp: 5163–5169

Bi-doped BaF2 crystal for broadband near-infrared light source

Jian Ruan, Liangbi Su, Jianrong Qiu, Danping Chen, and Jun Xu  »View Author Affiliations


Optics Express, Vol. 17, Issue 7, pp. 5163-5169 (2009)
http://dx.doi.org/10.1364/OE.17.005163


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Abstract

Bi-doped BaF2 crystal was grown by the temperature gradient technique and its spectral properties were investigated. The absorption, emission and excitation spectra were measured at room temperature. Two broadband emissions centered at 1070 and 1500 nm were observed in Bi-doped BaF2 crystal. This extraordinary luminescence should be ascribed to Bi-related centers at distinct sites. We suggest Bi2+ or Bi+ centers adjacent to F vacancy defects are the origins of the observed NIR emissions.

© 2009 Optical Society of America

OCIS Codes
(160.2540) Materials : Fluorescent and luminescent materials
(250.5230) Optoelectronics : Photoluminescence
(300.6280) Spectroscopy : Spectroscopy, fluorescence and luminescence

ToC Category:
Materials

History
Original Manuscript: January 26, 2009
Revised Manuscript: March 5, 2009
Manuscript Accepted: March 5, 2009
Published: March 17, 2009

Citation
Jian Ruan, Liangbi Su, Jianrong Qiu, Danping Chen, and Jun Xu, "Bi-doped BaF2 crystal for broadband near-infrared light source," Opt. Express 17, 5163-5169 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-7-5163


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