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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 8 — Apr. 13, 2009
  • pp: 6194–6202

Laser gate: multi-MeV electron acceleration and zeptosecond e-bunching

A. E. Kaplan and A. L. Pokrovsky  »View Author Affiliations

Optics Express, Vol. 17, Issue 8, pp. 6194-6202 (2009)

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Relativistically-intense laser beam with large field gradient (“laser gate”) enables strong inelastic scattering of electrons crossing the beam. This process allows for multi-MeV electron net acceleration per pass within the wavelength space. Inelastic scattering even in low-gradient laser field may also induce extremely tight temporal focusing and electron bunch formation down to quantum, zepto-second limit.

© 2009 Optical Society of America

OCIS Codes
(140.2600) Lasers and laser optics : Free-electron lasers (FELs)
(320.0320) Ultrafast optics : Ultrafast optics

ToC Category:
Lasers and Laser Optics

Original Manuscript: February 3, 2009
Revised Manuscript: March 27, 2009
Manuscript Accepted: March 28, 2009
Published: April 1, 2009

Alexander E. Kaplan and Alexander L. Pokrovsky, "Laser Gate: Multi-MeV electron acceleration and zeptosecond e-bunching," Opt. Express 17, 6194-6202 (2009)

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  12. We neglect here the "radiation friction" force on electron; this was supported by all our estimates and numerical simulations for the specific situation. The time for an electron to pass through the laser gate is very short, and for the radiation friction to affect the motion, one needs ©¡« 102-103, which is beyond the domain of interest. Also, when addressing the EM-electron interaction, we use classical approach, since in the cases of interest, a typical number of photons absorbed by an electron per pass, is of the order of mc2/¯h?¡« 106.
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Fig. 1. Fig. 2. Fig. 3.

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