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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 8 — Apr. 13, 2009
  • pp: 6252–6257

42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide

Laurent Vivien, Johann Osmond, Jean-Marc Fédéli, Delphine Marris-Morini, Paul Crozat, Jean-François Damlencourt, Eric Cassan, Y. Lecunff, and Suzanne Laval  »View Author Affiliations

Optics Express, Vol. 17, Issue 8, pp. 6252-6257 (2009)

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A compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length is reduced down to 15 μm using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 μm. A -3 dB bandwidth of 42 GHz has been measured at a 4V reverse bias with a responsivity as high as 1 A/W at the wavelength of 1.55 μm and a low dark current density of 60 mA/cm2. At a wavelength of 1.52 μm, a responsivity of 1 A/W is obtained under -0.5 V bias. The process is fully compatible with CMOS technology.

© 2009 Optical Society of America

OCIS Codes
(040.1490) Detectors : Cameras
(130.0250) Integrated optics : Optoelectronics
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects
(230.5160) Optical devices : Photodetectors

ToC Category:

Original Manuscript: October 1, 2008
Revised Manuscript: November 13, 2008
Manuscript Accepted: December 16, 2008
Published: April 2, 2009

Laurent Vivien, Johann Osmond, Jean-Marc Fédéli, Delphine Marris-Morini, Paul Crozat, Jean-François Damlencourt, Eric Cassan, Y. Lecunff, and Suzanne Laval, "42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide," Opt. Express 17, 6252-6257 (2009)

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