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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 10 — May. 10, 2010
  • pp: 10557–10566

100 nm period grating by high-index phase-mask immersion lithography

Yannick Bourgin, Yves Jourlin, Olivier Parriaux, Anne Talneau, Svetlen Tonchev, Colette Veillas, Petri Karvinen, Nicolas Passilly, Ahmad R. Md Zain, Richard M. De La Rue, Jürgen Van Erps, and David Troadec  »View Author Affiliations

Optics Express, Vol. 18, Issue 10, pp. 10557-10566 (2010)

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The interferogram of a high index phase mask of 200 nm period under normal incidence of a collimated beam at 244 nm wavelength with substantially suppressed zeroth order produces a 100 nm period grating in a resist film under immersion. The paper describes the phase mask design, its fabrication, the effect of electron-beam lithographic stitching errors and optical assessment of the fabricated sub-cutoff grating.

© 2010 OSA

OCIS Codes
(050.1950) Diffraction and gratings : Diffraction gratings
(220.3740) Optical design and fabrication : Lithography
(220.4241) Optical design and fabrication : Nanostructure fabrication
(050.6624) Diffraction and gratings : Subwavelength structures

ToC Category:
Diffraction and Gratings

Original Manuscript: January 11, 2010
Revised Manuscript: March 8, 2010
Manuscript Accepted: March 18, 2010
Published: May 6, 2010

Yannick Bourgin, Yves Jourlin, Olivier Parriaux, Anne Talneau, Svetlen Tonchev, Colette Veillas, Petri Karvinen, Nicolas Passilly, Ahmad R. Md Zain, Richard M. De La Rue, Jürgen Van Erps, and David Troadec, "100 nm period grating by high-index phase-mask immersion lithography," Opt. Express 18, 10557-10566 (2010)

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