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Energy Express

Energy Express

  • Editor: Bernard Kippelen
  • Vol. 18, Iss. S3 — Sep. 13, 2010
  • pp: A411–A420

Thickness-limited performance of CuInSe2 nanocrystal photovoltaic devices

Vahid A. Akhavan, Matthew G. Panthani, Brian W. Goodfellow, Dariya K. Reid, and Brian A. Korgel  »View Author Affiliations


Optics Express, Vol. 18, Issue S3, pp. A411-A420 (2010)
http://dx.doi.org/10.1364/OE.18.00A411


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Abstract

This paper reports our latest results using colloidal CuInSe2 nanocrystal inks to prepare photovoltaic (PV) devices. Thus far, devices with nanocrystal layers processed under ambient conditions with no post-deposition treatment have achieved power conversion efficiencies of up to 3.1%. Device efficiency is largely limited by charge carrier trapping in the nanocrystal layer, and the highest device efficiencies are obtained with very thin layers—less than 150 nm—absorbing only a fraction of the incident light. Devices with thicker nanocrystal layers had lower power conversion efficiency, despite the increased photon absorption, because the internal quantum efficiency of the devices decreased significantly. The thin, most efficient devices exhibited internal quantum efficiencies as high as 40%, across a wide spectrum. Mott-Schottky measurements revealed that the active region thickness in the devices is approximately 50 nm.

© 2010 OSA

OCIS Codes
(000.0000) General : General
(000.2700) General : General science

ToC Category:
Photovoltaics

History
Original Manuscript: July 12, 2010
Revised Manuscript: August 12, 2010
Manuscript Accepted: August 13, 2010
Published: August 20, 2010

Virtual Issues
Focus Issue: Thin-Film Photovoltaic Materials and Devices (2010) Optics Express

Citation
Vahid A. Akhavan, Matthew G. Panthani, Brian W. Goodfellow, Dariya K. Reid, and Brian A. Korgel, "Thickness-limited performance of CuInSe2 nanocrystal photovoltaic devices," Opt. Express 18, A411-A420 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-S3-A411


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