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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 11 — May. 24, 2010
  • pp: 11025–11032

High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters

Sun-Kyung Kim, Jin Wook Lee, Ho-Seok Ee, Yong-Tae Moon, Soon-Hong Kwon, Hoki Kwon, and Hong-Gyu Park  »View Author Affiliations

Optics Express, Vol. 18, Issue 11, pp. 11025-11032 (2010)

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We demonstrate a highly-efficient, large-area (1x1 mm2) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased ~1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.

© 2010 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(260.3160) Physical optics : Interference
(270.1670) Quantum optics : Coherent optical effects

ToC Category:
Optical Devices

Original Manuscript: March 9, 2010
Revised Manuscript: April 25, 2010
Manuscript Accepted: May 4, 2010
Published: May 11, 2010

Sun-Kyung Kim, Jin Wook Lee, Ho-Seok Ee, Yong-Tae Moon, Soon-Hong Kwon, Hoki Kwon, and Hong-Gyu Park, "High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters," Opt. Express 18, 11025-11032 (2010)

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