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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 13 — Jun. 21, 2010
  • pp: 13945–13950

Room-temperature electroluminescence from Si microdisks with Ge quantum dots

Jinsong Xia, Yuuki Takeda, Noritaka Usami, Takuya Maruizumi, and Yasuhiro Shiraki  »View Author Affiliations


Optics Express, Vol. 18, Issue 13, pp. 13945-13950 (2010)
http://dx.doi.org/10.1364/OE.18.013945


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Abstract

A current-injected silicon-based light-emitting device was fabricated on silicon-on-insulator (SOI) by embedding Ge self-assembled quantum dots into a silicon microdisk resonator with p-i-n junction for current-injection. Room-temperature resonant electroluminescence (EL) from Ge self-assembled quantum dots in the microdisk was successfully observed under current injection, and observed EL peaks corresponding to the whispering gallery modes (WGMs) supported by the microdisk resonator were well identified by means of numerical simulations.

© 2010 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(140.3948) Lasers and laser optics : Microcavity devices
(130.3990) Integrated optics : Micro-optical devices

ToC Category:
Optical Devices

History
Original Manuscript: April 7, 2010
Revised Manuscript: May 31, 2010
Manuscript Accepted: June 2, 2010
Published: June 14, 2010

Citation
Jinsong Xia, Yuuki Takeda, Noritaka Usami, Takuya Maruizumi, and Yasuhiro Shiraki, "Room-temperature electroluminescence from Si microdisks with Ge quantum dots," Opt. Express 18, 13945-13950 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-13-13945


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