Room-temperature electroluminescence from Si microdisks with Ge quantum dots

doi:10.1364/OE.18.013945

Room-temperature electroluminescence from Si microdisks with Ge quantum dots

Jinsong Xia, Yuuki Takeda, Noritaka Usami, Takuya Maruizumi, and Yasuhiro Shiraki »View Author Affiliations

Optics Express, Vol. 18, Issue 13, pp. 13945-13950 (2010)
http://dx.doi.org/10.1364/OE.18.013945

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Abstract
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Abstract

A current-injected silicon-based light-emitting device was fabricated on silicon-on-insulator (SOI) by embedding Ge self-assembled quantum dots into a silicon microdisk resonator with p-i-n junction for current-injection. Room-temperature resonant electroluminescence (EL) from Ge self-assembled quantum dots in the microdisk was successfully observed under current injection, and observed EL peaks corresponding to the whispering gallery modes (WGMs) supported by the microdisk resonator were well identified by means of numerical simulations.

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(140.3948) Lasers and laser optics : Microcavity devices
(130.3990) Integrated optics : Micro-optical devices

ToC Category:
Optical Devices

History
Original Manuscript: April 7, 2010
Revised Manuscript: May 31, 2010
Manuscript Accepted: June 2, 2010
Published: June 14, 2010

Citation
Jinsong Xia, Yuuki Takeda, Noritaka Usami, Takuya Maruizumi, and Yasuhiro Shiraki, "Room-temperature electroluminescence from Si microdisks with Ge quantum dots," Opt. Express 18, 13945-13950 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-13-13945

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References

D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100),” Appl. Phys. Lett. 63(25), 3509–3511 (1993). [CrossRef]
S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994). [CrossRef]
K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002). [CrossRef]
S. Fukatsu, H. Sunamuru, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett. 71(2), 258–261 (1997). [CrossRef]
L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000). [CrossRef] [PubMed]
L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003). [CrossRef]
G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994). [CrossRef]
D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003). [CrossRef]
A. A. Shklyaev, Y. Nakamura, F. N. Dultsev, and M. Ichikawa, “Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature,” J. Appl. Phys. 105, 063513–1-063513–4 (2009).
J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, “Point defect engineered Si sub-bandgap light-emitting diode,” Opt. Express 15(11), 6727–6733 (2007). [CrossRef] [PubMed]
J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).
“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004). [CrossRef]
J. S. Xia, K. Nemoto, Y. Ikegami, and Y. Shiraki, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett. 91, 011104–1-011104–3 (2007). [CrossRef] [PubMed]
M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008). [CrossRef] [PubMed]
S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992). [CrossRef]
T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000). [CrossRef]

Aniel, F.
Aziz, M. J.
Bao, J.
Bensahel, D.
Boucard, P.
Boucaud, P.
Brunhes, T.
Camera, A.
Campidelli, Y.
Capasso, F.
Cazzanelli, M.
Charnvanichborikarn, S.
Checoury, X.
Chinzei, T.
Coffa, S.
Dal Negro, L.
David, S.
Dultsev, F. N.
El Kurdi, M.
Faini, G.
Franzò, G.
Fukatsu, S.
Hernandez, C.
Iacona, F.
Ichikawa, M.
Ikegami, Y.
Kammerer, C.
Kato, Y.
Kawaguchi, K.
Kermarrec, O.
Kim, T.
Koh, S.
Komiyama, S.
Konishi, K.
Le Thanh, V.
Li, X.
Lourtioz, J.-M.
Mazzoleni, C.
Morooka, M.
Nakagawa, K.
Nakamura, Y.
Nakata, Y.
Nayak, D. K.
Negro, L. D.
Nemoto, K.
Ngo, T. P.
Nishida, A.
Ohmori, Y.
Ohnishi, T.
Oku, H.
Okumura, K.
Ossicini, S.
Pacifici, D.
Pavesi, L.
Polman, A.
Priolo, F.
Sagnes, I.
Sauvage, S
Sauvage, S.
Shiraki, Y.
Shklyaev, A. A.
Sunamura, H.
Sunamuru, H.
Tabbal, M.
Usami, N.
Williams, J. S.
Xia, J. S.
Zerounian, N.

Appl. Phys. Lett.

D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100),” Appl. Phys. Lett. 63(25), 3509–3511 (1993). [CrossRef]
K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002). [CrossRef]
S. Fukatsu, H. Sunamuru, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett. 71(2), 258–261 (1997). [CrossRef]
L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003). [CrossRef]
G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994). [CrossRef]
J. S. Xia, K. Nemoto, Y. Ikegami, and Y. Shiraki, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett. 91, 011104–1-011104–3 (2007). [CrossRef] [PubMed]
T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000). [CrossRef]

J. Appl. Phys.

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004). [CrossRef]

J. Cryst. Growth

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994). [CrossRef]

Jpn. J. Appl. Phys.

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992). [CrossRef]

Nature

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000). [CrossRef] [PubMed]

Opt. Express

Phys.Rev.B

D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003). [CrossRef]

Other

A. A. Shklyaev, Y. Nakamura, F. N. Dultsev, and M. Ichikawa, “Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature,” J. Appl. Phys. 105, 063513–1-063513–4 (2009).
J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).

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