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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 16 — Aug. 2, 2010
  • pp: 16474–16479

High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at λ ~1.55 μm

Jiho Joo, Sanghoon Kim, In Gyoo Kim, Ki-Seok Jang, and Gyungock Kim  »View Author Affiliations

Optics Express, Vol. 18, Issue 16, pp. 16474-16479 (2010)

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We present a high-sensitivity photoreceiver based on a vertical- illumination-type 100% Ge-on-Si photodetector. The fabricated p-i-n photodetector with a 90 μm-diameter mesa shows the −3 dB bandwidth of 7.7 GHz, and the responsivity of 0.9 A/W at λ~1.55 μm, corresponding to the external quantum efficiency of 72%. A TO-can packaged Ge photoreceiver exhibits the sensitivity of −18.5 dBm for a BER of 10−12 at data rate of 10 Gbps. This result proves the capability of a cost-effective 100% Ge-on-Si photoreceiver which can readily replace the III-V counterparts for optical communications.

© 2010 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(060.4510) Fiber optics and optical communications : Optical communications
(130.0250) Integrated optics : Optoelectronics
(200.4650) Optics in computing : Optical interconnects

ToC Category:

Original Manuscript: May 20, 2010
Revised Manuscript: July 1, 2010
Manuscript Accepted: July 15, 2010
Published: July 21, 2010

Jiho Joo, Sanghoon Kim, In Gyoo Kim, Ki-Seok Jang, and Gyungock Kim, "High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at λ ~1.55 μm," Opt. Express 18, 16474-16479 (2010)

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