High speed silicon optical modulator with self aligned fabrication process

doi:10.1364/OE.18.019064

High speed silicon optical modulator with self aligned fabrication process

D. J. Thomson, F. Y. Gardes, G. T. Reed, F. Milesi, and J-M Fedeli »View Author Affiliations

Optics Express, Vol. 18, Issue 18, pp. 19064-19069 (2010)
http://dx.doi.org/10.1364/OE.18.019064

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Abstract

With the imminent commercialisation of silicon photonic devices comes the requirement for a fabrication process capable of high yield and device performance repeatability. The precise alignment of the different elements of a device can be a major fabrication challenge for minimising performance variation or even device failure. In this paper a new design of high speed carrier depletion silicon optical modulator is introduced which features the use of a self-aligned fabrication process to form the pn junction. Experimental results are presented from an initial fabrication run, which has demonstrated a 6dB modulation depth at 10Gbit/s from a 3.5mm long device.

OCIS Codes
(060.4080) Fiber optics and optical communications : Modulation
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

History
Original Manuscript: June 21, 2010
Revised Manuscript: August 16, 2010
Manuscript Accepted: August 18, 2010
Published: August 23, 2010

Citation
D. J. Thomson, F. Y. Gardes, G. T. Reed, F. Milesi, and J-M Fedeli, "High speed silicon optical modulator with self aligned fabrication process," Opt. Express 18, 19064-19069 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-18-19064

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References

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