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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 21 — Oct. 11, 2010
  • pp: 22406–22411

Optics InfoBase > Optics Express > Volume 18 > Issue 21 > Page 22406

Strong interference enhancement of terahertz emission from a photoexcited semiconductor surface

M. I. Bakunov, R. V. Mikhaylovskiy, and M. Tani  »View Author Affiliations


Optics Express, Vol. 18, Issue 21, pp. 22406-22411 (2010)
http://dx.doi.org/10.1364/OE.18.022406


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Abstract

To enhance terahertz emission from an optically excited semiconductor surface, we propose to sandwich a thin (as compared to the terahertz wavelength) semiconductor layer between a dielectric hyperhemispherical lens and metal substrate. The layer is excited through the lens. The substrate provides constructive interference of terahertz waves emitted to the lens directly from the layer and reflected by the substrate. The lens outcouples terahertz radiation into free space. For InAs layer sandwiched between MgO (or sapphire) lens and metal substrate, our theory predicts order of magnitude increase in the terahertz yield as compared to the previous schemes of terahertz emission from semiconductor surfaces.

© 2010 OSA

OCIS Codes
(260.3090) Physical optics : Infrared, far
(230.7405) Optical devices : Wavelength conversion devices
(260.7120) Physical optics : Ultrafast phenomena

ToC Category:
Ultrafast Optics

History
Original Manuscript: August 25, 2010
Revised Manuscript: September 24, 2010
Manuscript Accepted: September 24, 2010
Published: October 7, 2010

Citation
M. I. Bakunov, R. V. Mikhaylovskiy, and M. Tani, "Strong interference enhancement of terahertz emission from a photoexcited semiconductor surface," Opt. Express 18, 22406-22411 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-21-22406


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