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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 22 — Oct. 25, 2010
  • pp: 22944–22957

Photo-stability of pulsed laser deposited GexAsySe100-x-y amorphous thin films

P. Němec, S. Zhang, V. Nazabal, K. Fedus, G. Boudebs, A. Moreac, M. Cathelinaud, and X.-H. Zhang  »View Author Affiliations

Optics Express, Vol. 18, Issue 22, pp. 22944-22957 (2010)

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Quest for photo-stable amorphous thin films in ternary GexAsySe100-x-y chalcogenide system is reported. Studied layers were fabricated using pulsed laser deposition technique. Scanning electron microscope with energy dispersive X-ray analyzer, Raman scattering spectroscopy, transmittance measurements, variable angle spectroscopic ellipsometry, and non-linear imaging technique with phase object inside the 4f imaging system were employed to characterize prepared thin films. Their photo-stability/photo-induced phenomena in as-deposited and relaxed states were also investigated, respectively. In linear regime, we found intrinsically photo-stable relaxed layers within Ge20As20Se60 composition. This composition presents also the highest optical damage threshold under non-linear optical conditions.

© 2010 OSA

OCIS Codes
(160.2750) Materials : Glass and other amorphous materials
(300.6450) Spectroscopy : Spectroscopy, Raman
(310.6860) Thin films : Thin films, optical properties
(350.3390) Other areas of optics : Laser materials processing
(160.5335) Materials : Photosensitive materials

ToC Category:
Thin Films

Original Manuscript: July 23, 2010
Revised Manuscript: September 28, 2010
Manuscript Accepted: September 30, 2010
Published: October 14, 2010

P. Němec, S. Zhang, V. Nazabal, K. Fedus, G. Boudebs, A. Moreac, M. Cathelinaud, and X.-H. Zhang, "Photo-stability of pulsed laser deposited GexAsySe100-x-y amorphous thin films," Opt. Express 18, 22944-22957 (2010)

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  1. K. Shimakawa, A. Kolobov, and S. R. Elliott, “Photoinduced effects and metastability in amorphous semiconductors and insulators,” Adv. Phys. 44(6), 475–588 (1995). [CrossRef]
  2. A. Zakery and S. R. Elliott, “Optical properties and applications of chalcogenide glasses: a review,” J. Non-Cryst. Solids 330(1-3), 1–12 (2003). [CrossRef]
  3. A. Ganjoo, K. Shimakawa, K. Kitano, and E. A. Davis, “Transient photodarkening in amorphous chalcogenides,” J. Non-Cryst. Solids 299–302, 917–923 (2002). [CrossRef]
  4. M. Frumar, B. Frumarova, T. Wagner, and P. Nemec, in Photo-Induced Metastability in Amorphous Semiconductors, A. V. Kolobov, ed., (Wiley-WCH, Weinheim, Germany, 2003), pp. 23–44.
  5. C. Meneghini and A. Villeneuve, “As2S3 photosensitivity by two-photon absorption: holographic gratings and self-written channel waveguides,” J. Opt. Soc. Am. B 15(12), 2946–2950 (1998). [CrossRef]
  6. W. D. Shen, M. Cathelinaud, M. D. Lequime, F. Charpentier, and V. Nazabal, “Light trimming of a narrow bandpass filter based on a photosensitive chalcogenide spacer,” Opt. Express 16(1), 373–383 (2008). [CrossRef] [PubMed]
  7. M. Chauvet, G. Fanjoux, K. P. Huy, V. Nazabal, F. Charpentier, T. Billeton, G. Boudebs, M. Cathelinaud, and S. P. Gorza, “Kerr spatial solitons in chalcogenide waveguides,” Opt. Lett. 34(12), 1804–1806 (2009). [CrossRef] [PubMed]
  8. M. Guignard, V. Nazabal, F. Smektala, H. Zeghlache, A. Kudlinski, Y. Quiquempois, and G. Martinelli, “High second-order nonlinear susceptibility induced in chalcogenide glasses by thermal poling,” Opt. Express 14(4), 1524–1532 (2006). [CrossRef] [PubMed]
  9. J. Z. Liu and P. C. Taylor, “Absence of photodarkening in bulk, glassy As2S3 and As2Se3 alloyed with copper,” Phys. Rev. Lett. 59(17), 1938–1941 (1987). [CrossRef] [PubMed]
  10. M. S. Iovu, S. D. Shutov, P. Boolchand, D. G. Georgiev, and E. P. Colomeico, “The relaxation of photodarkening in Sn doped amorphous As2Se3 films,” J. Optoelectron. Adv. Mater. 5, 389–395 (2003).
  11. A. Masuda, Y. Yonezawa, A. Morimoto, M. Kumeda, and T. Shimizu, “Influence of Pb incorporation on light-induced phenomena in amorphous Ge100-x-yPbxSy thin films,” J. Non-Cryst. Solids 217(2-3), 121–135 (1997). [CrossRef]
  12. G. Yang, H. S. Jain, A. T. Ganjoo, D. H. Zhao, Y. S. Xu, H. D. Zeng, and G. R. Chen, “A photo-stable chalcogenide glass,” Opt. Express 16(14), 10565–10571 (2008). [CrossRef] [PubMed]
  13. P. Němec, V. Nazabal, and M. Frumar, “Photoinduced phenomena in amorphous As4Se3 pulsed laser deposited thin films studied by spectroscopic ellipsometry,” J. Appl. Phys. 106(2), 023509 (2009). [CrossRef]
  14. E. Sleeckx, L. Tichy, P. Nagels, and R. Callaerts, “Thermally and photo-induced irreversible changes in the optical properties of amorphous GexSe100-x films,” J. Non-Cryst. Solids 198–200, 723–727 (1996). [CrossRef]
  15. E. Vateva, “Giant photo- and thermo-induced effects in chalcogenides,” J. Optoelectron. Adv. Mater. 9, 3108–3114 (2007).
  16. L. Calvez, Z. Yang, and P. Lucas, “Reversible giant photocontraction in chalcogenide glass,” Opt. Express 17(21), 18581–18589 (2009). [CrossRef]
  17. L. Calvez, Z. Y. Yang, and P. Lucas, “Light-induced matrix softening of Ge-As-Se network glasses,” Phys. Rev. Lett. 101(17), 177402 (2008). [CrossRef] [PubMed]
  18. Z. U. Borisova, Glassy Semiconductors (Plenum, New York, 1981).
  19. C. J. Zha, R. P. Wang, A. Smith, A. Prasad, R. A. Jarvis, and B. Luther-Davies, “Optical properties and structural correlations of GeAsSe chalcogenide glasses,” J. Mater. Sci. Mater. Electron. 18(S1), S389–S392 (2007). [CrossRef]
  20. R. P. Wang, A. V. Rode, D. Y. Choi, and B. Luther-Davies, “Investigation of the structure of GexAsySe1-x-y glasses by x-ray photoelectron spectroscopy,” J. Appl. Phys. 103(8), 083537 (2008). [CrossRef]
  21. A. Prasad, C. J. Zha, R. P. Wang, A. Smith, S. Madden, and B. Luther-Davies, “Properties of GexAsySe1-x-y glasses for all-optical signal processing,” Opt. Express 16(4), 2804–2815 (2008). [CrossRef] [PubMed]
  22. J. T. Gopinath, M. Soljacic, E. P. Ippen, V. N. Fuflyigin, W. A. King, and M. Shurgalin, “Third order nonlinearities in Ge-As-Se-based glasses for telecommunications applications,” J. Appl. Phys. 96(11), 6931–6933 (2004). [CrossRef]
  23. C. Quémard, F. Smektala, V. Couderc, A. Barthelemy, and J. Lucas, “Chalcogenide glasses with high non linear optical properties for telecommunications,” J. Phys. Chem. Solids 62(8), 1435–1440 (2001). [CrossRef]
  24. R. A. Jarvis, R. P. Wang, A. V. Rode, C. Zha, and B. Luther-Davies, “Thin film deposition of Ge33As12Se55 by pulsed laser deposition and thermal evaporation: Comparison of properties,” J. Non-Cryst. Solids 353(8-10), 947–949 (2007). [CrossRef]
  25. D. A. P. Bulla, R. P. Wang, A. Prasad, A. V. Rode, S. J. Madden, and B. Luther-Davies, “On the properties and stability of thermally evaporated Ge-As-Se thin films,” Appl. Phys., A Mater. Sci. Process. 96(3), 615–625 (2009). [CrossRef]
  26. D. A. Turnbull, J. S. Sanghera, V. Nguyen, and I. D. Aggarwal, “Fabrication of waveguides in sputtered films of GeAsSe glass via photodarkening with above bandgap light,” Mater. Lett. 58(1-2), 51–54 (2004). [CrossRef]
  27. A. Zakery and M. Hatami, “Nonlinear optical properties of pulsed-laser-deposited GeAsSe films and simulation of a nonlinear directional coupler switch,” J. Opt. Soc. Am. B 22(3), 591–597 (2005). [CrossRef]
  28. D. Y. Choi, S. Madden, A. Rode, R. Wang, and B. Luther-Davies, “Fabrication of low loss Ge33As12Se55 (AMTIR-1) planar waveguides,” Appl. Phys. Lett. 91(1), 011115 (2007). [CrossRef]
  29. M. Frumar, B. Frumarova, P. Nemec, T. Wagner, J. Jedelsky, and M. Hrdlicka, “Thin chalcogenide films prepared by pulsed laser deposition - new amorphous materials applicable in optoelectronics and chemical sensors,” J. Non-Cryst. Solids 352(6-7), 544–561 (2006). [CrossRef]
  30. J. Tauc, “Absorption edge and internal electric fields in amorphous semiconductors,” Mater. Res. Bull. 5(8), 721–729 (1970). [CrossRef]
  31. G. Boudebs and S. Cherukulappurath, “Nonlinear optical measurements using a 4f coherent imaging system with phase objects,” Phys. Rev. A 69(5), 053813–053818 (2004). [CrossRef]
  32. G. Boudebs and C. B. de Araujo, “Characterization of light-induced modification of the nonlinear refractive index using a one-laser-shot nonlinear imaging technique,” Appl. Phys. Lett. 85(17), 3740–3742 (2004). [CrossRef]
  33. T. S. Moss, “A relationship between the refractive index and the infra-red threshold of sensitivity for photoconductors,” Proc. Phys. Soc. London, Sect. B 63(3), 167–176 (1950). [CrossRef]
  34. S. Sugai, “Stochastic random network model in Ge and Si chalcogenide glasses,” Phys. Rev. B Condens. Matter 35(3), 1345–1361 (1987). [CrossRef] [PubMed]
  35. K. Murase, T. Fukunaga, K. Yakushiji, T. Yoshimi, and I. Yunoki, “Investigation of stability of (Ge,Sn)-(S, or Se)4/2 cluster by vibrational-spectra,” J. Non-Cryst. Solids 59–6, 883–886 (1983). [CrossRef]
  36. T. Mori, S. Onari, and T. Arai, “Raman-scattering in amorphous As-Se system,” Jpn. J. Appl. Phys. 19(6), 1027–1031 (1980). [CrossRef]
  37. M. Ystenes, W. Brockner, and F. Menzel, “Scaled quantum-mechanical (Sqm) calculations and vibrational analyses of the cage-like molecules P4S3, As4Se3, P4Se3, As4S3, and PAs3S3,” Vib. Spectrosc. 5(2), 195–204 (1993). [CrossRef]
  38. M. Ystenes, F. Menzel, and W. Brockner, “Ab-initio quantum-mechanical calculations of energy, geometry, vibrational frequencies and IR intensities of tetraphosphorus tetrasulfide, alpha-P4S4(D2d), and vibrational analysis of As4S4 and As4Se4,” Spectrochim. Acta A Mol. Biomol. Spectrosc. 50(2), 225–231 (1994). [CrossRef]
  39. M. Wihl, M. Cardona, and J. Tauc, “Raman scattering in amorphous Ge and III-V compounds,” J. Non-Cryst. Solids 8–10, 172–178 (1972). [CrossRef]
  40. L. Petit, N. Carlie, R. Villeneuve, J. Massera, M. Couzi, A. Humeau, G. Boudebs, and K. Richardson, “Effect of the substitution of S for Se on the structure and non-linear optical properties of the glasses in the system Ge0.18Ga0.05Sb0.07S0.70-xSex,” J. Non-Cryst. Solids 352(50-51), 5413–5420 (2006). [CrossRef]

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