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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 22 — Oct. 25, 2010
  • pp: 23030–23034

Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes

Byung-Jae Kim, Michael A. Mastro, Jennifer Hite, Charles R. Eddy, Jr., and Jihyun Kim  »View Author Affiliations

Optics Express, Vol. 18, Issue 22, pp. 23030-23034 (2010)

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We report a graphene-based transparent conductive electrode for use in ultraviolet (UV) GaN light emitting diodes (LEDs). A few-layer graphene (FLG) layer was mechanically deposited. UV light at a peak wavelength of 368nm was successfully emitted by the FLG layer as transparent contact to p-GaN. The emission of UV light through the thin graphene layer was brighter than through the thick graphene layer. The thickness of the graphene layer was characterized by micro-Raman spectroscopy. Our results indicate that this novel graphene-based transparent conductive electrode holds great promise for use in UV optoelectronics for which conventional ITO is less transparent than graphene.

© 2010 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(230.4000) Optical devices : Microstructure fabrication

ToC Category:
Optical Devices

Original Manuscript: October 5, 2010
Manuscript Accepted: October 11, 2010
Published: October 15, 2010

Byung-Jae Kim, Michael A. Mastro, Jennifer Hite, Charles R. Eddy, and Jihyun Kim, "Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes," Opt. Express 18, 23030-23034 (2010)

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