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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 22 — Oct. 25, 2010
  • pp: 23324–23330

10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier for colorless WDM-PON

Hyun-Soo Kim, Dong Churl Kim, Ki-Soo Kim, Byung-Seok Choi, and O-Kyun Kwon  »View Author Affiliations


Optics Express, Vol. 18, Issue 22, pp. 23324-23330 (2010)
http://dx.doi.org/10.1364/OE.18.023324


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Abstract

We demonstrated 10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier (REAM-SOA) using simplified fabrication process. Good performance at 10.7 Gb/s was obtained with an extinction ratio of > 10 dB and a power penalty of < 1 dB at a 10−9 bit error rate (BER) up to 20 km transmission. The device operated over a 50 nm spectral range within 1 dB received power variation at a 10−9 BER.

© 2010 OSA

OCIS Codes
(060.4510) Fiber optics and optical communications : Optical communications
(250.5300) Optoelectronics : Photonic integrated circuits

ToC Category:
Fiber Optics and Optical Communications

History
Original Manuscript: August 25, 2010
Revised Manuscript: October 3, 2010
Manuscript Accepted: October 13, 2010
Published: October 20, 2010

Citation
Hyun-Soo Kim, Dong Churl Kim, Ki-Soo Kim, Byung-Seok Choi, and O-Kyun Kwon, "10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier for colorless WDM-PON," Opt. Express 18, 23324-23330 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-22-23324


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