We demonstrate an all-silicon photodetector working at telecom wavelength. The device is a simple metal-semiconductor-metal detector fabricated on silicon-on-insulator. A two-dimensional photonic crystal nanocavity (Q = 60,000) is used to increase the response that arises from the linear and two-photon absorption of silicon. The responsivity of the detector is about 20 mA/W and its bandwidth is larger than 1 GHz.

© 2010 OSA

1. M. T. Hill, H. J. S. Dorren, T. De Vries, X. J. M. Leijtens, J. H. Den Besten, B. Smalbrugge, Y.-S. Oei, H. Binsma, G.-D. Khoe, and M. K. Smit, “A fast low-power optical memory based on coupled micro-ring lasers,” Nature 432(7014), 206–209 (2004). [CrossRef] [PubMed]
2. M. El kurdi, P. Boucaud, S. Sauvage, G. Fishman, O. Kermarrec, Y. Campidelli, D. Bensahel, G. Saint-Girons, I. Sagnes, and G. Patriarche, “Silicon-on-insulator waveguide photodetector with Ge/Si self-assembled islands,” J. Appl. Phys. 92(4), 1858 (2002). [CrossRef]
3. M. Oehme, J. Werner, M. Jutzi, G. Wöhl, E. Kasper, and M. Berroth, “High-speed germanium photodiodes monolithically integrated on silicon with MBE,” Thin Solid Films 508(1-2), 393–395 (2006). [CrossRef]
4. D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007). [CrossRef] [PubMed]
5. L. Vivien, M. Rouvière, J. M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007). [CrossRef] [PubMed]
6. T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007). [CrossRef] [PubMed]
7. M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, “CMOS-Compatible all-Si high-speed waveguide photodiodes with high responsivity in near-infrared communication band,” IEEE Photon. Technol. Lett. 19(3), 152–154 (2007). [CrossRef]
8. J. D. B. Bradley, P. E. Jessop, and A. P. Knights, “Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550 nm,” Appl. Phys. Lett. 86(24), 241103 (2005). [CrossRef]
9. Y. Liu, C. W. Cho, W. Y. Cheung, and H. K. Tsang, “In-line channel power monitor based on helium ion implantation in Silicon-on-insulator waveguides,” IEEE Photon. Technol. Lett. 18(17), 1882–1884 (2006). [CrossRef]
10. J. K. Doylend, P. E. Jessop, and A. P. Knights, “Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection,” Opt. Express 18(14), 14671–14678 (2010). [CrossRef] [PubMed]
11. T. K. Liang, H. K. Tsang, I. E. Day, J. Drake, A. P. Knights, and M. Asghari, “Silicon waveguide two-photon absorption detector at 1.5 μm wavelength for autocorrelation measurements,” Appl. Phys. Lett. 81(7), 1323 (2002). [CrossRef]
12. J. Bravo-Abad, E. P. Ippen, and M. Soljačić, “Ultrafast photodetection in an all-silicon chip enabled by two-photon absorption,” Appl. Phys. Lett. 94(24), 241103 (2009). [CrossRef]
13. Y. Akahane, T. Asano, B.-S. Song, and S. Noda, “High-Q photonic nanocavity in a two-dimensional photonic crystal,” Nature 425(6961), 944–947 (2003). [CrossRef] [PubMed]
14. E. Kuramochi, H. Taniyama, T. Tanabe, A. Shinya, and M. Notomi, “Ultrahigh-Q two-dimensional photonic crystal slab nanocavities in very thin barriers,” Appl. Phys. Lett. 93(11), 111112 (2008). [CrossRef]
15. Z. Han, X. Checoury, D. Néel, S. David, M. El Kurdi, and P. Boucaud, “Optimized design for 2 × 106 ultra-high Q siliconphotonic crystal cavities,” Opt. Commun. 283(21), 4387–4391 (2010). [CrossRef]
16. T. Tanabe, H. Sumikura, H. Taniyama, A. Shinya, and M. Notomi, “All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip,” Appl. Phys. Lett. 96(10), 101103 (2010). [CrossRef]
17. A. R. Zain, N. P. Johnson, M. Sorel, and R. M. De La Rue, “Ultra high quality factor one dimensional photonic crystal/photonic wire micro-cavities in silicon-on-insulator (SOI),” Opt. Express 16(16), 12084–12089 (2008). [CrossRef] [PubMed]
18. E. Kuramochi, H. Taniyama, T. Tanabe, K. Kawasaki, Y.-G. Roh, and M. Notomi, “Ultrahigh-Q one-dimensional photonic crystal nanocavities with modulated mode-gap barriers on SiO2 claddings and on air claddings,” Opt. Express 18(15), 15859–15869 (2010). [CrossRef] [PubMed]
19. Y. Tanaka, T. Asano, R. Hatsuta, and S. Noda, “Investigation of point-defect cavity formed in two-dimensional photonic crystal slab with one-sided dielectric cladding,” Appl. Phys. Lett. 88(1), 011112 (2006). [CrossRef]
20. E. Kuramochi, M. Notomi, S. Mitsugi, A. Shinya, T. Tanabe, and T. Watanabe, “Ultrahigh-Q photonic crystal nanocavities realized by the local width modulation of a line defect,” Appl. Phys. Lett. 88(4), 041112 (2006). [CrossRef]
21. A. F. Oskooi, D. Roundy, M. Ibanescu, P. Bermel, J. D. Joannopoulos, and S. G. Johnson, “Meep: A flexible free-software package for electromagnetic simulations by the FDTD method,” Comput. Phys. Commun. 181(3), 687–702 (2010). [CrossRef]
22. X. Checoury, S. Enoch, C. Lopez, and A. Blanco, “Stacking patterns in self-assembly opal photonic crystals,” Appl. Phys. Lett. 90(16), 161131 (2007). [CrossRef]
23. M. Dinu, F. Quochi, and H. Garcia, “Third-order nonlinearities in silicon telecom wavelengths,” Appl. Phys. Lett. 82(18), 2954–2956 (2003). [CrossRef]
24. P. Barclay, K. Srinivasan, and O. Painter, “Nonlinear response of silicon photonic crystal microresonators excited via an integrated waveguide and fiber taper,” Opt. Express 13(3), 801–820 (2005). [CrossRef] [PubMed]
25. N. Matsuda, R. Shimizu, Y. Mitsumori, H. Kosaka, A. Sato, H. Yokoyama, K. Yamada, T. Watanabe, T. Tsuchizawa, H. Fukuda, S. Itabashi, and K. Edamatsu, “All-optical phase modulations in a silicon wire waveguide at ultralow light levels,” Appl. Phys. Lett. 95(17), 171110 (2009). [CrossRef]

Appl. Phys. Lett.

• J. D. B. Bradley, P. E. Jessop, and A. P. Knights, “Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550 nm,” Appl. Phys. Lett. 86(24), 241103 (2005). [CrossRef]
• T. K. Liang, H. K. Tsang, I. E. Day, J. Drake, A. P. Knights, and M. Asghari, “Silicon waveguide two-photon absorption detector at 1.5 μm wavelength for autocorrelation measurements,” Appl. Phys. Lett. 81(7), 1323 (2002). [CrossRef]
• J. Bravo-Abad, E. P. Ippen, and M. Soljačić, “Ultrafast photodetection in an all-silicon chip enabled by two-photon absorption,” Appl. Phys. Lett. 94(24), 241103 (2009). [CrossRef]
• E. Kuramochi, H. Taniyama, T. Tanabe, A. Shinya, and M. Notomi, “Ultrahigh-Q two-dimensional photonic crystal slab nanocavities in very thin barriers,” Appl. Phys. Lett. 93(11), 111112 (2008). [CrossRef]
• T. Tanabe, H. Sumikura, H. Taniyama, A. Shinya, and M. Notomi, “All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip,” Appl. Phys. Lett. 96(10), 101103 (2010). [CrossRef]
• Y. Tanaka, T. Asano, R. Hatsuta, and S. Noda, “Investigation of point-defect cavity formed in two-dimensional photonic crystal slab with one-sided dielectric cladding,” Appl. Phys. Lett. 88(1), 011112 (2006). [CrossRef]
• E. Kuramochi, M. Notomi, S. Mitsugi, A. Shinya, T. Tanabe, and T. Watanabe, “Ultrahigh-Q photonic crystal nanocavities realized by the local width modulation of a line defect,” Appl. Phys. Lett. 88(4), 041112 (2006). [CrossRef]
• X. Checoury, S. Enoch, C. Lopez, and A. Blanco, “Stacking patterns in self-assembly opal photonic crystals,” Appl. Phys. Lett. 90(16), 161131 (2007). [CrossRef]
• M. Dinu, F. Quochi, and H. Garcia, “Third-order nonlinearities in silicon telecom wavelengths,” Appl. Phys. Lett. 82(18), 2954–2956 (2003). [CrossRef]
• N. Matsuda, R. Shimizu, Y. Mitsumori, H. Kosaka, A. Sato, H. Yokoyama, K. Yamada, T. Watanabe, T. Tsuchizawa, H. Fukuda, S. Itabashi, and K. Edamatsu, “All-optical phase modulations in a silicon wire waveguide at ultralow light levels,” Appl. Phys. Lett. 95(17), 171110 (2009). [CrossRef]

Comput. Phys. Commun.

• A. F. Oskooi, D. Roundy, M. Ibanescu, P. Bermel, J. D. Joannopoulos, and S. G. Johnson, “Meep: A flexible free-software package for electromagnetic simulations by the FDTD method,” Comput. Phys. Commun. 181(3), 687–702 (2010). [CrossRef]

IEEE Photon. Technol. Lett.

• Y. Liu, C. W. Cho, W. Y. Cheung, and H. K. Tsang, “In-line channel power monitor based on helium ion implantation in Silicon-on-insulator waveguides,” IEEE Photon. Technol. Lett. 18(17), 1882–1884 (2006). [CrossRef]
• M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, “CMOS-Compatible all-Si high-speed waveguide photodiodes with high responsivity in near-infrared communication band,” IEEE Photon. Technol. Lett. 19(3), 152–154 (2007). [CrossRef]

J. Appl. Phys.

• M. El kurdi, P. Boucaud, S. Sauvage, G. Fishman, O. Kermarrec, Y. Campidelli, D. Bensahel, G. Saint-Girons, I. Sagnes, and G. Patriarche, “Silicon-on-insulator waveguide photodetector with Ge/Si self-assembled islands,” J. Appl. Phys. 92(4), 1858 (2002). [CrossRef]

Nature

• M. T. Hill, H. J. S. Dorren, T. De Vries, X. J. M. Leijtens, J. H. Den Besten, B. Smalbrugge, Y.-S. Oei, H. Binsma, G.-D. Khoe, and M. K. Smit, “A fast low-power optical memory based on coupled micro-ring lasers,” Nature 432(7014), 206–209 (2004). [CrossRef] [PubMed]
• Y. Akahane, T. Asano, B.-S. Song, and S. Noda, “High-Q photonic nanocavity in a two-dimensional photonic crystal,” Nature 425(6961), 944–947 (2003). [CrossRef] [PubMed]

Opt. Commun.

• Z. Han, X. Checoury, D. Néel, S. David, M. El Kurdi, and P. Boucaud, “Optimized design for 2 × 106 ultra-high Q siliconphotonic crystal cavities,” Opt. Commun. 283(21), 4387–4391 (2010). [CrossRef]

Opt. Express

• A. R. Zain, N. P. Johnson, M. Sorel, and R. M. De La Rue, “Ultra high quality factor one dimensional photonic crystal/photonic wire micro-cavities in silicon-on-insulator (SOI),” Opt. Express 16(16), 12084–12089 (2008). [CrossRef] [PubMed]
• E. Kuramochi, H. Taniyama, T. Tanabe, K. Kawasaki, Y.-G. Roh, and M. Notomi, “Ultrahigh-Q one-dimensional photonic crystal nanocavities with modulated mode-gap barriers on SiO2 claddings and on air claddings,” Opt. Express 18(15), 15859–15869 (2010). [CrossRef] [PubMed]
• J. K. Doylend, P. E. Jessop, and A. P. Knights, “Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection,” Opt. Express 18(14), 14671–14678 (2010). [CrossRef] [PubMed]
• D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007). [CrossRef] [PubMed]
• L. Vivien, M. Rouvière, J. M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007). [CrossRef] [PubMed]
• T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007). [CrossRef] [PubMed]
• P. Barclay, K. Srinivasan, and O. Painter, “Nonlinear response of silicon photonic crystal microresonators excited via an integrated waveguide and fiber taper,” Opt. Express 13(3), 801–820 (2005). [CrossRef] [PubMed]

Thin Solid Films

• M. Oehme, J. Werner, M. Jutzi, G. Wöhl, E. Kasper, and M. Berroth, “High-speed germanium photodiodes monolithically integrated on silicon with MBE,” Thin Solid Films 508(1-2), 393–395 (2006). [CrossRef]

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