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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 24 — Nov. 22, 2010
  • pp: 24434–24440

Energy efficient chalcogenide waveguide Raman laser for optical interconnect

Ying Huang, Ping Shum, Feng Luan, and Ming Tang  »View Author Affiliations

Optics Express, Vol. 18, Issue 24, pp. 24434-24440 (2010)

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We propose and theoretically demonstrate that chalcogenide (As2Se3) waveguide is a more energy efficient platform for Raman amplification and lasing than silicon for optical interconnect applications. In spite of its smaller Raman gain, ultrahigh maximum conversion efficiency of 40%, seven times better than that of silicon Raman laser, is obtained. 33% lasing threshold reduction to 299mW is simultaneously observed, together with wider linear region. A figure-of-merit (FOM) factor has been established for direct comparison between As2Se3 and silicon waveguide Raman laser. It is found that As2Se3 is superior in terms of energy consumption and device miniaturization capability. Further threshold reduction to 100mW is achieved by optimizing Stokes end-facet reflectivity.

© 2010 OSA

OCIS Codes
(140.3550) Lasers and laser optics : Lasers, Raman
(190.4390) Nonlinear optics : Nonlinear optics, integrated optics
(230.7370) Optical devices : Waveguides

ToC Category:
Lasers and Laser Optics

Original Manuscript: June 30, 2010
Revised Manuscript: August 11, 2010
Manuscript Accepted: August 12, 2010
Published: November 9, 2010

Ying Huang, Ping Shum, Feng Luan, and Ming Tang, "Energy efficient chalcogenide waveguide 
Raman laser for optical interconnect," Opt. Express 18, 24434-24440 (2010)

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