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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 24 — Nov. 22, 2010
  • pp: 25241–25249

Femtosecond luminescence spectroscopy of core states in silicon nanocrystals

K. Žídek, F. Trojánek, P. Malý, L. Ondič, I. Pelant, K. Dohnalová, L. Šiller, R. Little, and B. R. Horrocks  »View Author Affiliations

Optics Express, Vol. 18, Issue 24, pp. 25241-25249 (2010)

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We present a study of ultrafast carrier transfer from highly luminescent states inside the core of silicon nanocrystal (due to quasidirect transitions) to states on the nanocrystal-matrix interface. This transfer leads to a sub-picosecond luminescence decay, which is followed by a slower decay component induced by carrier relaxation to lower interface states. We investigate the luminescence dynamics for two different surface passivation types and we propose a general model describing spectral dependence of ultrafast carrier dynamics. Our results stress the crucial role of the energy distribution of the interface states on surface-related quenching of quasidirect luminescence in silicon nanocrystals. We discuss how to avoid this quenching in order to bring the attractive properties of the quasidirect recombination closer to exploitation.

© 2010 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(300.6280) Spectroscopy : Spectroscopy, fluorescence and luminescence
(300.6530) Spectroscopy : Spectroscopy, ultrafast
(310.6628) Thin films : Subwavelength structures, nanostructures

ToC Category:

Original Manuscript: October 15, 2010
Revised Manuscript: November 4, 2010
Manuscript Accepted: November 9, 2010
Published: November 17, 2010

K. Žídek, F. Trojánek, P. Malý, L. Ondič, I. Pelant, K. Dohnalová, L. Šiller, R. Little, and B. R. Horrocks, "Femtosecond luminescence spectroscopy of core states in silicon nanocrystals," Opt. Express 18, 25241-25249 (2010)

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