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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 25 — Dec. 6, 2010
  • pp: 25633–25641

11 W single gain-chip dilute nitride disk laser emitting around 1180 nm

Ville-Markus Korpijärvi, Tomi Leinonen, Janne Puustinen, Antti Härkönen, and Mircea D. Guina  »View Author Affiliations

Optics Express, Vol. 18, Issue 25, pp. 25633-25641 (2010)

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We report power scaling experiments of a GaInNAs/GaAs-based semiconductor disk laser operating at ~1180 nm. Using a single gain chip cooled to mount temperature of ~10 °C we obtained 11 W of output power. For efficient thermal management we used a water-cooled microchannel mount and an intracavity diamond heat spreader. Laser performance was studied using different spot sizes of the pump beam on the gain chip and different output couplers. Intracavity frequency-doubling experiments led to generation of ~6.2 W of laser radiation at ~590 nm, a wavelength relevant for the development of sodium laser guide stars.

© 2010 OSA

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7270) Lasers and laser optics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: August 20, 2010
Revised Manuscript: November 5, 2010
Manuscript Accepted: November 14, 2010
Published: November 23, 2010

Ville-Markus Korpijärvi, Tomi Leinonen, Janne Puustinen, Antti Härkönen, and Mircea D. Guina, "11 W single gain-chip dilute nitride disk laser emitting around 1180 nm," Opt. Express 18, 25633-25641 (2010)

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