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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 25 — Dec. 6, 2010
  • pp: 26492–26498

Bandgap control using strained beam structures for Si photonic devices

Kohei Yoshimoto, Ryota Suzuki, Yasuhiko Ishikawa, and Kazumi Wada  »View Author Affiliations

Optics Express, Vol. 18, Issue 25, pp. 26492-26498 (2010)

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We have demonstrated that bandgap energy of Si can be controlled by micro-mechanically structured Si beams (250 nm thick, 3 μm wide, and 15 μm long) elastically deformed by an external force. Microscopic photoluminescence spectroscopy reveals that downward bending of the beam by 3 μm reveals a red shift in the peak from ~1100 nm up to ~1300 nm. It is found from calculations based on deformation potentials and finite element method that tensile strain as large as ~1.5% is generated in the top surface of the deformed beam and responsible for the red shift of the peak. The presented result should be a proof of concept to cancel wavelength fluctuation unavoidably occurring on uncooled LSIs in terms of stress application, and thereby an enabler of wavelength division multiplexing implementation on a chip. The applications of other beam materials such as Ge and GaAs are discussed.

© 2010 OSA

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(130.3120) Integrated optics : Integrated optics devices

ToC Category:
Integrated Optics

Original Manuscript: October 5, 2010
Revised Manuscript: November 25, 2010
Manuscript Accepted: November 29, 2010
Published: December 2, 2010

Kohei Yoshimoto, Ryota Suzuki, Yasuhiko Ishikawa, and Kazumi Wada, "Bandgap control using strained beam structures for Si photonic devices," Opt. Express 18, 26492-26498 (2010)

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